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Author |
Codreanu, Iulian; Boreman, Glenn D. |
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Title |
Infrared microstrip dipole antennas |
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Journal Article |
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Year |
2001 |
Publication |
Microwave and Optical Technology Letters |
Abbreviated Journal |
Microw Opt Technol Lett |
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29 |
Issue |
6 |
Pages |
381-383 |
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Keywords |
optical antennas |
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Abstract 10.1002/mop.1184.abs We report on the successful use of niobium microbolometers coupled to microstrip dipole antennas for the detection of midinfrared radiation. Measurements of the detector response versus antenna length performed at the 10.6 μm wavelength allowed us to identify the first three current-wave resonances along the antenna arms. The detector response was also measured as a function of the radiation wavelength in the 911 μm spectral domain. Excellent agreement between the experimental results and finite-difference time-domain (FDTD) predictions was obtained. |
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RPLAB @ gujma @ |
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738 |
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Author |
Puscasu, Irina; Boreman, Glenn D. |
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Title |
Theoretical and experimental analysis of transmission and enchanced absorption of frequency selective surfaces in the infrared |
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Conference Article |
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Year |
2001 |
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Proc. SPIE |
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Proc. SPIE |
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Volume |
4293 |
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185-190 |
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Keywords |
optical antennas |
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A comparative study between theory and experiment is presented for transmission through lossy frequency selective surfaces (FSSs) on silicon in the 2 – 15 micrometer range. Important parameters controlling the resonance shape and location are identified: dipole length, spacing, impedance, and dielectric surroundings. Their separate influence is exhibited. The primary resonance mechanism of FSSs is the resonance of the individual metallic patches. There is no discernable resonance arising from a feed-coupled configuration. The real part of the element's impedance controls the minimum value of transmission, while scarcely affecting its location. Varying the imaginary part shifts the location of resonance, while only slightly changing the minimum value of transmission. With such fine-tuning, it is possible to make a good fit between theory and experiment near the dipole resonance on any sample. A fixed choice of impedance can provide a reasonable fit to all samples fabricated under the same conditions. The dielectric surroundings change the resonance wavelength of the FSS compared to its value in air. The presence of FSS on the substrate increases the absorptivity/emissivity of the surface in a resonant way. Such enhancement is shown for dipole and cross arrays at several wavelengths. |
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RPLAB @ gujma @ |
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753 |
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Skalare, A.; McGrath, William R.; Echternach, P. M.; Leduc, H. G.; Siddiqi, I.; Verevkin, A.; Prober, D. E. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Aluminum hot-electron bolometer mixers at submillimeter wavelengths |
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Journal Article |
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Year |
2001 |
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IEEE Trans. Appl. Supercond. |
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11 |
Issue |
1 |
Pages |
641-644 |
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Al HEB mixer, contacts, interface, in situ, in-situ, Aluminium HEB mixer |
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Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 Ω down to about 9 Ω per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 μm long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies. |
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1051-8223 |
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ref919426b |
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1061 |
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Author |
Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers |
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Journal Article |
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Year |
2001 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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79 |
Issue |
15 |
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2483-2485 |
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0003-6951 |
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311 |
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Author |
Kroug, M. |
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Title |
Hot electron bolometric mixers for a quasi-optical terahertz receiver |
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Book Whole |
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2001 |
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Ph.D. thesis |
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Chalmers University of Technology, Gothenburg, Sweden |
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310 |
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Author |
Van Rudd, J.; Johnson, Jon L.; Mittleman, Daniel M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Cross-polarized angular emission patterns from lens-coupled terahertz antennas |
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Journal Article |
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Year |
2001 |
Publication |
J. Opt. Soc. Am. B |
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18 |
Issue |
10 |
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1524 |
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0740-3224 |
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475 |
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Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
NbN hot electron bolometric mixers for terahertz receivers |
Type |
Journal Article |
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Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
11 |
Issue |
1 |
Pages |
962-965 |
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Keywords |
NbN HEB mixers |
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Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two. |
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312 |
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Cherednichenko, S.; Kroug, M.; Merkel, H.; Kollberg, E.; Loudkov, D.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Local oscillator power requirement and saturation effects in NbN HEB mixers |
Type |
Conference Article |
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Year |
2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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273-285 |
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NbN HEB mixers, LO power, local oscillator power, saturation effect, dynamic range |
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The local oscillator power required for NbN hot-electron bolometric mixers (P LO ) was investigated with respect to mixer size, critical temperature and ambient temperature. P LO can be decreased by a factor of 10 as the mixer size decreases from 4×0.4 µm 2 to 0.6×0.13 µm 2 . For the smallest volume mixer the optimal local oscillator power was found to be 15 nW. We found that for such mixer no signal compression was observed up to an input signal of 2 nW which corresponds to an equivalent input load of 20,000 K. For a constant mixer volume, reduction of T c can decrease optimal local oscillator power at least by a factor of 2 without a deterioration of the receiver noise temperature. Bath temperature was found to have minor effect on the receiver characteristics. |
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San Diego, CA, USA |
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Jet Propulsion Laboratory, California Inst.it.u.t.e of Technology |
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318 |
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Kroug, M.; Cherednichenko, S.; Choumas, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Richter, H.; Loudkov, D.; Voronov, B.; Gol'Tsman, G. |
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Title |
HEB quasi-optical heterodyne receiver for THz frequencies |
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Conference Article |
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Year |
2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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244-252 |
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HEB mixer, NbN, MgO, conversion gain bandwidth, noise temperature |
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San Diego, CA, USA |
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319 |
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Hübers, H.-W.; Semenov, A. D.; Richter, H.; Schubert, J.; Hadjiloucas, S.; Bowen, J. W.; Gol'tsman, G.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Antenna pattern of the quasi-optical hot-electron bolometric mixer at terahertz frequencies |
Type |
Conference Article |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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286-296 |
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NbN HEB mixers |
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San Diego, CA, USA |
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