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(1980). ГОСТ 19.102-77. ЕСПД. Стадии разработки.
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Dzardanov, A., Ekstrom, H., Gershenzon, E., Gol'tsman, G., Jacobsson, S., Karasik, B., et al. (1994). Hot-electron superconducting mixers for 20-500 GHz operation. In Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. (Vol. 2250, pp. 276–278).
Abstract: Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies.
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Gershenzon, E. M., Gershenzon, M. E., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1984). Heating of electrons in a superconductor in the resistive state by electromagnetic radiation. Sov. Phys. JETP, 59(2), 442–450.
Abstract: The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
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Gershenzon, E. M., Il'in, V. A., Litvak-Gorskaya, L. B., & Filonovich, S. R. (1979). Character of submillimeter photoconductivity in n-lnSb. Sov. Phys. JETP, 49(1), 121–128.
Abstract: A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8).
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Matthias, B. T. (1953). Transition temperatures of superconductors. Phys. Rev., 92(4), 874–876.
Abstract: Superconductivity has been found in a number of new compounds between the non-superconducting transition elements and nonmetals such as Si, Ge, and Te. These findings have suggested possible criteria for superconductivity in both elements and compounds.
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