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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Submillimeter spectroscopy of semiconductors |
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Journal Article |
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Year |
1973 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
37 |
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2 |
Pages |
299-304 |
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Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
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The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
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Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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Journal Article |
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Year |
1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
5 |
Pages |
185-186 |
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Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
Transitions of electrons between excited states of donors in germanium |
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Journal Article |
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Year |
1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
2 |
Pages |
63-65 |
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Keywords |
Ge, donors, excited states |
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1740 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
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Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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Year |
1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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14 |
Issue |
6 |
Pages |
241 |
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Ge, gamma irradiation, defects, impurities |
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no |
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1742 |
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Author |
Danerud, M.; Winkler, D.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.; Lindgren, M. |
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Title |
Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films |
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Conference Article |
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Year |
1993 |
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Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
2104 |
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Pages |
183-184 |
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YBCO HTS HEB detectors |
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Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W. |
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Spie |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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https://inis.iaea.org/search/searchsinglerecord.aspx?recordsFor=SingleRecord&RN=25034664 |
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10.1117/12.2298489 |
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1653 |
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Peltonen, J. T.; Peng, Z. H.; Korneeva, Yu. P.; Voronov, B. M.; Korneev, A. A.; Semenov, A. V.; Gol'tsman, G. N.; Tsai, J. S; Astafiev, Oleg |
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Title |
Coherent dynamics and decoherence in a superconducting weak link |
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Journal Article |
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Year |
2016 |
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Physic. Rev. B, |
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Physic. Rev. B, |
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94 |
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180508 |
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RPLAB @ akorneev @ |
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1123 |
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Author |
Beck, M.; Klammer, M.; Lang, S.; Leiderer, P.; Kabanov, V. V.; Gol'tsman, G. N.; Demsar, J. |
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Title |
Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy |
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Journal Article |
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Year |
2011 |
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Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
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Volume |
107 |
Issue |
17 |
Pages |
4 |
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Keywords |
NbN thin film, energy gap dynamics |
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Using time-domain terahertz spectroscopy we performed direct studies of the photoinduced suppression and recovery of the superconducting gap in a conventional BCS superconductor NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the bare quasiparticle recombination rate, the Cooper pair-breaking rate and the electron-phonon coupling constant, λ=1.1±0.1, which is in excellent agreement with theoretical estimates. |
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RPLAB @ gujma @ |
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641 |
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Manova, N. N.; Korneeva, Yu. P.; Korneev, A. A.; Slysz, W.; Voronov, B. M.; Gol'tsman, G. N. |
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Title |
Superconducting NbN single-photon detector integrated with quarter-wave resonator |
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Journal Article |
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2011 |
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Tech. Phys. Lett. |
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Tech. Phys. Lett. |
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37 |
Issue |
5 |
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469-471 |
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SSPD, SNSPD |
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The spectral dependence of the quantum efficiency of superconducting NbN single-photon detectors integrated with quarter-wave resonators based on Si3N4, SiO2, and SiO layers has been studied. |
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RPLAB @ gujma @ |
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664 |
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Ozhegov, R. V.; Gorshkov, K. N.; Gol'tsman, G. N.; Kinev, N. V.; Koshelets, V. P. |
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Title |
The stability of a terahertz receiver based on a superconducting integrated receiver |
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Journal Article |
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2011 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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24 |
Issue |
3 |
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035003 |
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SIS mixer, SIR, stability |
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We present the results of stability testing of a terahertz radiometer based on a superconducting receiver with a SIS tunnel junction as the mixer and a flux-flow oscillator as the local oscillator. In the continuum mode, the receiver with a noise temperature of 95 K at 510 GHz measured over the intermediate frequency (IF) passband of 4-8 GHz offered a noise equivalent temperature difference of 10 ± 1 mK at an integration time of 1 s. We offer a method to significantly increase the integration time without the use of complex measurement equipment. The receiver observed a strong signal over a final detection bandwidth of 4 GHz and offered an Allan time of 5 s. |
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RPLAB @ gujma @ |
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Seleznev, V. A.; Tarkhov, M. A.; Voronov, B. M.; Milostnaya, I. I.; Lyakhno, V. Yu; Garbuz, A. S.; Mikhailov, M. Yu; Zhigalina, O. M.; Gol'tsman, G. N. |
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Deposition and characterization of few-nanometers-thick superconducting Mo-Re films |
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2008 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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21 |
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11 |
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115006 (1 to 6) |
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We report on the fabrication and investigation of few-nanometers-thick superconducting molybdenum-rhenium (Mo-Re) films intended for use in nanowire single-photon superconducting detectors (SSPDs). Mo-Re films were deposited on sapphire substrates by DC magnetron sputtering of an Mo(60)-Re(40) alloy target in an atmosphere of argon. The films 2-10 nm thick had critical temperatures (Tc) from 5.6 to 9.7 K. HRTEM (high-resolution transmission electron microscopy) analysis showed that the films had a homogeneous structure. XPS (x-ray photoelectron spectroscopy) analysis showed the Mo to Re atom ratio to be 0.575/0.425, oxygen concentration to be 10%, and concentration of other elements to be 1%. |
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RPLAB @ gujma @ |
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