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Author Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Goltsman, G. url  openurl
  Title Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform Type Conference Article
  Year 2017 Publication Proc. SPBOPEN Abbreviated Journal Proc. SPBOPEN  
  Volume Issue Pages 449-450  
  Keywords Bragg waveguides  
  Abstract We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. Transmission spectra of the integrated notch filter has been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed.  
  Address St. Petersburg, Russia  
  Corporate Author Thesis  
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  Area Expedition Conference  
  Notes Duplicated as 1141 Approved no  
  Call Number (up) Serial 1257  
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Author Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A. url  openurl
  Title Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures Type Abstract
  Year 2019 Publication Proc. Amorphous and Nanostructured Chalcogenides Abbreviated Journal Proc. Amorphous and Nanostructured Chalcogenides  
  Volume Issue Pages 47-48  
  Keywords optical waveguides  
  Abstract The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.  
  Address  
  Corporate Author Thesis  
  Publisher Technical University of Moldova Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Poster Approved no  
  Call Number (up) Serial 1281  
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Author Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. url  doi
openurl 
  Title Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films Type Journal Article
  Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 1-4  
  Keywords TiN MKID  
  Abstract We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number (up) Serial 1296  
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Author Arutyunov, K. Y.; Ramos-Álvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol’tsman, G. N. url  openurl
  Title Quasi-1-dimensional superconductivity in highly disordered NbN nanowires Type Miscellaneous
  Year 2016 Publication arXiv Abbreviated Journal  
  Volume Issue Pages  
  Keywords narrow NbN nanowires, BCS  
  Abstract The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the superconducting gap and the pairing potential. Here we report experimental study of electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. We find that conventional models based on phase slip concept provide reasonable fits for the shape of the R(T) transition curve. Temperature dependence of the critical current follows the text-book Ginzburg-Landau prediction for quasi-one-dimensional superconducting channel Ic~(1-T/Tc)^3/2. Hence, one may conclude that the intrinsic electronic inhomogeneity either does not exist in our structures, or, if exist, does not affect their resistive state properties.  
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  Notes Duplicated as 1332 Approved no  
  Call Number (up) Serial 1338  
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Author Korneev, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Pernice, W.; An, P.; Golikov, A.; Zubkova, E.; Goltsman, G. url  doi
openurl 
  Title Superconducting Single-Photon Detectors for Integrated Nanophotonics Circuits Type Conference Article
  Year 2017 Publication 16th ISEC Abbreviated Journal 16th ISEC  
  Volume Issue Pages 1-3  
  Keywords SSPD, SNSPD  
  Abstract We present an overview of our recent achievements in integration of superconducting nanowire single-photon detectors SNSPD with dielectric optical waveguides. We are able to produce complex nanophotonics integrated circuits containing optical elements and photon detector on single chip thus producing a compact integrated platform for quantum optics applications.  
  Address  
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  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number (up) 8314200 Serial 1200  
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Author Griffin, M. J.; Abergel, A.; Abreu, A.; Ade, P. A. R.; André, P.; Augueres, J.-L.; Babbedge, T.; Bae, Y.; Baillie, T.; Baluteau, J.-P.; Barlow, M. J.; Bendo, G.; Benielli, D.; Bock, J. J.; Bonhomme, P.; Brisbin, D.; Brockley-Blatt, C.; Caldwell, M.; Cara, C.; Castro-Rodriguez, N.; Cerulli, R.; Chanial, P.; Chen, S.; Clark, E.; Clements, D. L.; Clerc, L.; Coker, J.; Communal, D.; Conversi, L.; Cox, P.; Crumb, D.; Cunningham, C.; Daly, F.; Davis, G. R.; de Antoni, P.; Delderfield, J.; Devin, N.; di Giorgio, A.; Didschuns, I.; Dohlen, K.; Donati, M.; Dowell, A.; Dowell, C. D.; Duband, L.; Dumaye, L.; Emery, R. J.; Ferlet, M.; Ferrand, D.; Fontignie, J.; Fox, M.; Franceschini, A.; Frerking, M.; Fulton, T.; Garcia, J.; Gastaud, R.; Gear, W. K.; Glenn, J.; Goizel, A.; Griffin, D. K.; Grundy, T.; Guest, S.; Guillemet, L.; Hargrave, P. C.; Harwit, M.; Hastings, P.; Hatziminaoglou, E.; Herman, M.; Hinde, B.; Hristov, V.; Huang, M.; Imhof, P.; Isaak, K. J.; Israelsson, U.; Ivison, R. J.; Jennings, D.; Kiernan, B.; King, K. J.; Lange, A. E.; Latter, W.; Laurent, G.; Laurent, P.; Leeks, S. J.; Lellouch, E.; Levenson, L.; Li, B.; Li, J.; Lilienthal, J.; Lim, T.; Liu, S. J.; Lu, N.; Madden, S.; Mainetti, G.; Marliani, P.; McKay, D.; Mercier, K.; Molinari, S.; Morris, H.; Moseley, H.; Mulder, J.; Mur, M.; Naylor, D. A.; Nguyen, H.; O'Halloran, B.; Oliver, S.; Olofsson, G.; Olofsson, H.-G.; Orfei, R.; Page, M. J.; Pain, I.; Panuzzo, P.; Papageorgiou, A.; Parks, G.; Parr-Burman, P.; Pearce, A.; Pearson, C.; Pérez-Fournon, I.; Pinsard, F.; Pisano, G.; Podosek, J.; Pohlen, M.; Polehampton, E. T.; Pouliquen, D.; Rigopoulou, D.; Rizzo, D.; Roseboom, I. G.; Roussel, H.; Rowan-Robinson, M.; Rownd, B.; Saraceno, P.; Sauvage, M.; Savage, R.; Savini, G.; Sawyer, E.; Scharmberg, C.; Schmitt, D.; Schneider, N.; Schulz, B.; Schwartz, A.; Shafer, R.; Shupe, D. L.; Sibthorpe, B.; Sidher, S.; Smith, A.; Smith, A. J.; Smith, D.; Spencer, L.; Stobie, B.; Sudiwala, R.; Sukhatme, K.; Surace, C.; Stevens, J. A.; Swinyard, B. M.; Trichas, M.; Tourette, T.; Triou, H.; Tseng, S.; Tucker, C.; Turner, A.; Vaccari, M.; Valtchanov, I.; Vigroux, L.; Virique, E.; Voellmer, G.; Walker, H.; Ward, R.; Waskett, T.; Weilert, M.; Wesson, R.; White, G. J.; Whitehouse, N.; Wilson, C. D.; Winter, B.; Woodcraft, A. L.; Wright, G. S.; Xu, C. K.; Zavagno, A.; Zemcov, M.; Zhang, L.; Zonca, E. openurl 
  Title The Herschel-SPIRE instrument and its in-flight performance Type Journal Article
  Year 2010 Publication Astron. Astrophys. Abbreviated Journal A&A  
  Volume 518 Issue Pages 7  
  Keywords SPIRE  
  Abstract The Spectral and Photometric Imaging REceiver (SPIRE), is the Herschel Space Observatory`s submillimetre camera and spectrometer. It contains a three-band imaging photometer operating at 250, 350 and 500 μm, and an imaging Fourier-transform spectrometer (FTS) which covers simultaneously its whole operating range of 194-671 μm (447-1550 GHz). The SPIRE detectors are arrays of feedhorn-coupled bolometers cooled to 0.3 K. The photometer has a field of view of 4Â´× 8´, observed simultaneously in the three spectral bands. Its main operating mode is scan-mapping, whereby the field of view is scanned across the sky to achieve full spatial sampling and to cover large areas if desired. The spectrometer has an approximately circular field of view with a diameter of 2.6´. The spectral resolution can be adjusted between 1.2 and 25 GHz by changing the stroke length of the FTS scan mirror. Its main operating mode involves a fixed telescope pointing with multiple scans of the FTS mirror to acquire spectral data. For extended source measurements, multiple position offsets are implemented by means of an internal beam steering mirror to achieve the desired spatial sampling and by rastering of the telescope pointing to map areas larger than the field of view. The SPIRE instrument consists of a cold focal plane unit located inside the Herschel cryostat and warm electronics units, located on the spacecraft Service Module, for instrument control and data handling. Science data are transmitted to Earth with no on-board data compression, and processed by automatic pipelines to produce calibrated science products. The in-flight performance of the instrument matches or exceeds predictions based on pre-launch testing and modelling: the photometer sensitivity is comparable to or slightly better than estimated pre-launch, and the spectrometer sensitivity is also better by a factor of 1.5-2.  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number (up) RPLAB @ gujma @ Serial 695  
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Author Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. doi  openurl
  Title The electron-phonon relaxation time in thin superconducting titanium nitride films Type Journal Article
  Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 103 Issue 25 Pages 252602 (1 to 4)  
  Keywords disordered TiN films, electron-phonon relaxation time  
  Abstract We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.
 
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number (up) RPLAB @ kovalyuk @ Serial 941  
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Author Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. doi  openurl
  Title Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform Type Conference Article
  Year 2017 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 917 Issue Pages 062042  
  Keywords Si3N4, Bragg waveguides  
  Abstract We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number (up) RPLAB @ kovalyuk @ Serial 1141  
Permanent link to this record
 

 
Author Chuprina, I. N.; An, P. P.; Zubkova, E. G.; Kovalyuk, V. V.; Kalachev, A. A.; Gol'tsman, G. N. doi  openurl
  Title Optimisation of spontaneous four-wave mixing in a ring microcavity Type Conference Article
  Year 2017 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 47 Issue 10 Pages 887-891  
  Keywords ring microcavity  
  Abstract Abstract. A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the disper- sion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numeri- cal calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: com- pletely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number (up) RPLAB @ kovalyuk @ Serial 1142  
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Author Kooi, J. W.; Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Dieleman, P.; Baryshev, A.; de Lange, G. url  doi
openurl 
  Title IF impedance and mixer gain of NbN hot electron bolometers Type Journal Article
  Year 2007 Publication J. Appl. Phys. Abbreviated Journal  
  Volume 101 Issue 4 Pages 044511  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number (up) RPLAB @ s @ Serial 445  
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