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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G.
Title Capture of photoexcited carriers by shallow impurity centers in germanium Type Journal Article
Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 50 Issue 4 Pages 728-734
Keywords Ge, photoexcited carriers, shallow impurity centers
Abstract Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.
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Notes Approved no
Call Number (up) Serial 1720
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L.
Title Observation of free carrier resonances in p-type germanium at submillimeter wavelengths Type Journal Article
Year 1978 Publication Sov. Phys. Solid State Abbreviated Journal Sov. Phys. Solid State
Volume 20 Issue 4 Pages 573-579
Keywords p-Ge, free carriers, resonances
Abstract The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.
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Notes Approved no
Call Number (up) Serial 1721
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Author Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G.
Title Carrier lifetime in excited states of shallow impurities in germanium Type Journal Article
Year 1977 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 25 Issue 12 Pages 539-543
Keywords Ge, shallow impurities, excited states
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Notes Approved no
Call Number (up) Serial 1726
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L.
Title Energy spectrum of acceptors in germanium and its response to a magnetic field Type Journal Article
Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 45 Issue 4 Pages 769-776
Keywords p-Ge, photoconductivity, energy spectrum, magnetic field
Abstract We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.
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Notes Approved no
Call Number (up) Serial 1727
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
Title Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field Type Journal Article
Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 45 Issue 3 Pages 555-565
Keywords Ge, GaAs, magnetic field, donors, energy spectrum
Abstract The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
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Notes Approved no
Call Number (up) Serial 1728
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
Title Effect of a high magnetic field on the spectrum of donors in InSb Type Journal Article
Year 1977 Publication Fizika i Tekhnika Poluprovodnikov Abbreviated Journal Fizika i Tekhnika Poluprovodnikov
Volume 11 Issue 12 Pages 2373-2375
Keywords InSb, energy spectrum, donors, high magnetic field
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Language Russian Summary Language Original Title
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Notes Воздействие сильного магнитного поля на спектр доноров в InSb Approved no
Call Number (up) Serial 1729
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Investigation of free excitons in Ge and their condensation at submillimeter wavelengths Type Journal Article
Year 1976 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 43 Issue 1 Pages 116-122
Keywords Ge, free excitons
Abstract Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
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Notes Approved no
Call Number (up) Serial 1731
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Author Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G.
Title Energy spectrum of free excitons in germanium Type Journal Article
Year 1973 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 18 Issue 3 Pages 93
Keywords Ge, free excitons, energy spectrum
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Notes Approved no
Call Number (up) Serial 1734
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Submillimeter spectroscopy of semiconductors Type Journal Article
Year 1973 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 37 Issue 2 Pages 299-304
Keywords semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons
Abstract The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
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Notes Approved no
Call Number (up) Serial 1735
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P.
Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 5 Pages 185-186
Keywords Ge, Si, neutral impurity atom, binding energy
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Notes Approved no
Call Number (up) Serial 1739
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Author Gershenzon, E. M.; Gol'tsman, G. N.
Title Transitions of electrons between excited states of donors in germanium Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 2 Pages 63-65
Keywords Ge, donors, excited states
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Notes Approved no
Call Number (up) Serial 1740
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M.
Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 6 Pages 241
Keywords Ge, gamma irradiation, defects, impurities
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Notes Approved no
Call Number (up) Serial 1742
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Author Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, Roman; Korneev, A.; Kouminov, P.; Okunev, O.; Chulkova, G.; Gol'tsman, G.
Title Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range Type Miscellaneous
Year 2004 Publication ResearchGate Abbreviated Journal ResearchGate
Volume Issue Pages
Keywords NbN SSPD, SNSPD
Abstract We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices.
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Notes Not attributed to any publisher! File name: PR9VervekinSfin_f.doc; Author: JAOLEARY; Last modification date: 2004-02-26 Approved no
Call Number (up) Serial 1751
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Author Hübers, H.-W.; Semenov, A.; Richter, H.; Birk, Manfred; Krocka, Michael; Mair, Ulrich; Smirnov, K.; Gol'tsman, G.; Voronov, B.
Title Terahertz heterodyne receiver with a hot-electron bolometer mixer Type Conference Article
Year 2002 Publication Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop Abbreviated Journal Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop
Volume Issue Pages
Keywords NbN HEB mixers
Abstract During the past decade major advances have been made regarding low noise mixers for terahertz (THz) heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a µW power from the local oscillator (LO). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, are of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated the performance of the receiver. This yields important information for the development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA)[1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR.
Address Monterey, CA, USA
Corporate Author Thesis
Publisher Place of Publication Editor Wold, J.; Davidson, J.
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Notes 4 pages; Unconfirmed but cited in https://kups.ub.uni-koeln.de/1622/1/bedorf.pdf; There is a Program of the Workshop: https://www.yumpu.com/en/document/view/7411055/far-ir-submm-mm-detector-technology-workshop-sofia-usra (there is no title of this article in the Program); There is also identical publication in Proc. ISSTT (Serial: 332, “A broadband terahertz heterodyne receiver with an NbN HEB mixer”). Approved no
Call Number (up) Serial 1829
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Author Danerud, M.; Winkler, D.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.; Lindgren, M.
Title Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films Type Conference Article
Year 1993 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 2104 Issue Pages 183-184
Keywords YBCO HTS HEB detectors
Abstract Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W.
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Publisher Spie Place of Publication Editor Birch, J.R.; Parker, T.J.
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Area Expedition Conference 18th International Conference on Infrared and Millimeter Waves
Notes https://inis.iaea.org/search/searchsinglerecord.aspx?recordsFor=SingleRecord&RN=25034664 Approved no
Call Number (up) 10.1117/12.2298489 Serial 1653
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