Korneev, A., Korneeva, Y., Florya, I., Elezov, M., Manova, N., Tarkhov, M., et al. (2011). Recent advances in superconducting NbN single-photon detector development. In Proc. SPIE (Vol. 8072, 807202 (1 to 10)).
Abstract: Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs.
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Manova, N. N., Korneeva, Y. P., Korneev, A. A., Slysz, W., Voronov, B. M., & Gol'tsman, G. N. (2011). Superconducting NbN single-photon detector integrated with quarter-wave resonator. Tech. Phys. Lett., 37(5), 469–471.
Abstract: The spectral dependence of the quantum efficiency of superconducting NbN single-photon detectors integrated with quarter-wave resonators based on Si3N4, SiO2, and SiO layers has been studied.
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Driessen, E. F. C. (2009). Coupling light to periodic nanostructures. Fac. Scien., Leiden Un., , 144.
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Wang, Z., Miki, S., & Fujiwara, M. (2009). Superconducting nanowire single-photon detectors for quantum information and communications. IEEE J. Sel. Topics Quantum Electron., 15(6), 1741–1747.
Abstract: Superconducting nanowire single-photon detectors (SNSPDs or SSPD) are highly promising devices in the growing field of quantum information and communications technology. We have developed a practical SSPD system with our superconducting thin films and devices fabrication, optical coupling packaging, and cryogenic technology. The SSPD system consists of six-channel SSPD devices and a compact Gifford-McMahon (GM) cryocooler, and can operate continuously on 100 V ac power without the need for any cryogens. The SSPD devices were fabricated from high-quality niobium nitride (NbN) ultrathin films that were epitaxially grown on single-crystal MgO substrates. The packaged SSPD devices were temperature stabilized to 2.96 K ± 10 mK. The system detection efficiency for an SSPD device with an area of 20 × 20 ¿m2 was found to be 2.6% and 4.5% at wavelengths of 1550 and 1310 nm, respectively, at a dark count rate of 100 Hz, and a jitter of 100 ps full-width at half maximum. We also performed ultrafast BB84 quantum key distribution (QKD) field testing and entanglement-based QKD experiments using these SSPD devices.
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Gaggero, A., Nejad, S. J., Marsili, F., Mattioli, F., Leoni, R., Bitauld, D., et al. (2010). Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl. Phys. Lett., 97(15), 3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Engel, A., Aeschbacher, A., Inderbitzin, K., Schilling, A., Il'in, K., Hofherr, M., et al. (2011). Tantalum nitride superconducting single-photon detectors with low cut-off energy. arXiv, , 9.
Abstract: Materials with a small superconducting energy gap favor a high detection efficiency of low-energy photons in superconducting nanowire single-photon detectors. We developed a TaN detector with smaller gap and lower density of states at the Fermi energy than in comparable NbN devices, while other relevant parameters remain essentially unchanged. This results in a reduction of the minimum photon energy required for direct detection to $\approx1/3$ as compared to NbN.
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Dorenbos, S. N., Heeres, R. W., Driessen, E. F. C., & Zwiller, V. (2011). Efficient and robust fiber coupling of superconducting single photon detectors. arXiv, , 6.
Abstract: We applied a recently developed fiber coupling technique to superconducting single photon detectors (SSPDs). As the detector area of SSPDs has to be kept as small as possible, coupling to an optical fiber has been either inefficient or unreliable. Etching through the silicon substrate allows fabrication of a circularly shaped chip which self aligns to the core of a ferrule terminated fiber in a fiber sleeve. In situ alignment at cryogenic temperatures is unnecessary and no thermal stress during cooldown, causing misalignment, is induced. We measured the quantum efficiency of these devices with an attenuated tunable broadband source. The combination of a lithographically defined chip and high precision standard telecommunication components yields near unity coupling efficiency and a system detection efficiency of 34% at a wavelength of 1200 nm. This quantum efficiency measurement is confirmed by an absolute efficiency measurement using correlated photon pairs (with $\lambda$ = 1064 nm) produced by spontaneous parametric down-conversion. The efficiency obtained via this method agrees well with the efficiency measured with the attenuated tunable broadband source.
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Dauler, E., Kerman, A., Robinson, B., Yang, J., Voronov, B., Goltsman, G., et al. (2009). Photon-number-resolution with sub-30-ps timing using multi-element superconducting nanowire single photon detectors. J. Modern Opt., 56(2), 364–373.
Abstract: A photon-number-resolving detector based on a four-element superconducting nanowire single photon detector is demonstrated to have sub-30-ps resolution in measuring the arrival time of individual photons. This detector can be used to characterize the photon statistics of non-pulsed light sources and to mitigate dead-time effects in high-speed photon counting applications. Furthermore, a 25% system detection efficiency at 1550 nm was demonstrated, making the detector useful for both low-flux source characterization and high-speed photon-counting and quantum communication applications. The design, fabrication and testing of this detector are described, and a comparison between the measured and theoretical performance is presented.
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Marsili, F., Bitauld, D., Fiore, A., Gaggero, A., Leoni, R., Mattioli, F., et al. (2009). Superconducting parallel nanowire detector with photon number resolving functionality. J. Modern Opt., 56(2-3), 334–344.
Abstract: We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise.
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Флоря, И. Н., Корнеева, Ю. П., Корнеев, А. А., & Гольцман, Г. Н. (2011). Сверхпроводниковый однофотонный детектор для среднего инфракрасного диапазона на основе узких параллельных полосок. Труды МФТИ, 3(2), 14–17.
Abstract: Мы рассматриваем ультрабыстрый сверхпроводниковый однофотонный детектор (SSPD). SSPD представляет собой тонкопленочную наноструктуру — очень узкую и длинную полоску сверхпроводника, изогнутую в виде меандра, изготовленную из пленки NbN толщиной 4 нм, нанесенной на сапфировую подложку. SSPD хорошо сопрягается с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему. В стремлении продвинуться в средний ИК диапозон нам удалось разработать SSPD в виде параллельно соединенных полосок с шириной полоски всего 50 нм и сохранить при этом сверхпроводящие свойства. Эти детекторы показывают более чем на порядок большую чувствительность на длине волны 3;5 мкм, чем SSPD в виде меандра. Полученные результаты открывают путь к эффективным детекторам среднего ИК-диапазона, обладающим скоростью счета свыше 1 ГГц.
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