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Zhang, Zijing; Zhang, Jianlong; Wu, Long; Zhang, Yong; Zhao, Yuan; Su, Jianzhong |
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Title |
Photon-counting chirped amplitude modulation lidar using a smart premixing method |
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Journal Article |
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Year |
2013 |
Publication |
Opt. Lett. |
Abbreviated Journal |
Opt. Lett. |
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38 |
Issue |
21 |
Pages |
4389-4392 |
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Keywords |
photon-counting detector, lidar, Geiger mode APD, Geiger mode lidar |
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Abstract |
We proposed a new premixing method for photon-counting chirped amplitude modulation lidar (PCCAML). Earlier studies used the counting results of the returned signal detected by a Geiger mode avalanche photodiode detector (Gm-APD) to mix with the reference signal, called the postmixing method. We use an alternative method known as the premixing method, in which the reference signal is used to directly modulate the sampling gate width of the Gm-APD, and the mixing of the returned signal and the reference signal is completed before the Gm-APD. This premixing method is more flexible and may perform better than the postmixing method in terms of signal-to-noise ratio by cutting down a separated mixer commonly used in the postmixing lidar system. Furthermore, this premixing method lowers the demand for the sampling frequency of the Gm-APD. It allows the use of a much wider modulation bandwidth to improve the range accuracy and resolution. To the best of our knowledge, this is the first report to use the premixing method in the PCCAML system, which will benefit future lidar applications. |
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1006 |
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Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Title |
Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
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Journal Article |
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2020 |
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Nanomaterials (Basel) |
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Nanomaterials (Basel) |
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10 |
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5 |
Pages |
1-12 |
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Keywords |
detector; quantum dots; short-wave infrared range; silicon |
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In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. |
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Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia |
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English |
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2079-4991 |
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PMID:32365694; PMCID:PMC7712218 |
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1151 |
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Minaeva, O.; Fraine, A.; Korneev, A.; Divochiy, A.; Goltsman, G.; Sergienko, A. |
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High resolution optical time-domain reflectometry using superconducting single-photon detectors |
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Conference Article |
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2012 |
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Frontiers in Opt. 2012/Laser Sci. XXVIII |
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Frontiers in Opt. 2012/Laser Sci. XXVIII |
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Fw3a.39 |
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SSPD, SNSPD, Photodetectors; Fiber characterization; Light beams; Optical time domain reflectometry; Photon counting; Single mode fibers; Single photon detectors; Superconductors |
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We discuss the advantages and limitations of single-photon optical time-domain reflectometry with superconducting single-photon detectors. The higher two-point resolution can be achieved due to superior timing performance of SSPDs in comparison with InGaAs APDs. |
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Optical Society of America |
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1237 |
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Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. |
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Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity |
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2014 |
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Laser Phys. Lett. |
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11 |
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1 |
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015004 (1 to 4) |
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HEB applications, HEB detector applications, short THz pulses detection |
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We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. |
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1076 |
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Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. |
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Title |
Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation |
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Journal Article |
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2015 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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118 |
Issue |
19 |
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194303 |
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terahertz detectors, asymmetric carbon nanotubes, CNT |
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Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. |
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0021-8979 |
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1169 |
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