| Records |
| Author |
Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Moshkova, M.; Morozov, P.; Seleznev, V.; Smirnov, K. |
| Title |
Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range |
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Conference Article |
| Year |
2018 |
Publication |
Proc. AIP Conf. |
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| Volume |
1936 |
Issue |
1 |
Pages |
020019 |
| Keywords |
NbN PNR SSPD, SNSPD |
| Abstract |
We used technology of making high-efficiency superconducting single-photon detectors as a basis for improvement of photon-number-resolving devices. By adding optical cavity and using an improved NbN superconducting film, we enhanced previously reported system detection efficiency at telecom range for such detectors. Our results show that implementation of optical cavity helps to develop four-section device with quantum efficiency over 50% at 1.55 µm. Performed experimental studies of detecting multi-photon optical pulses showed irregularities over defining multi-photon through single-photon quantum efficiency. |
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doi:10.1063/1.5025457 |
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1231 |
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Baeva, E.; Sidorova, M.; Korneev, A.; Goltsman, G. |
| Title |
Precise measurement of the thermal conductivity of superconductor |
Type |
Conference Article |
| Year |
2018 |
Publication |
Proc. AIP Conf. |
Abbreviated Journal |
Proc. AIP Conf. |
| Volume |
1936 |
Issue |
1 |
Pages |
020003 (1 to 4) |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
Measuring the thermal properties such as the heat capacity provide information about intrinsic mechanisms operated inside. In general, the ratio between electron and phonon specific heat Ce/Cp shows how the absorbed energy shared between electron and phonon subsystems. In this work we make estimations for amplitude-modulated absorption of THz radiation technique for investigation of the ratio Ce/Cp in superconducting Niobium Nitride (NbN) at T = Tc. Our results indicates that experimentally the frequency of modulation has to be extra large to extract the quantity. We perform a new technique allowed to work at low frequency with accurately measurement of absorbed power. |
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doi:10.1063/1.5025441 |
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1311 |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. |
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Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors |
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Conference Article |
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1978 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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42 |
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6 |
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1231-1234 |
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spectrum, semiconductors, admixtures, strong magnetic-field |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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blagosklonskaya1978effect |
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1724 |
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Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S. |
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Studying key principles for design and fabrication of silicon photonic-based beamforming networks |
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Conference Article |
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2019 |
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PIERS-Spring |
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PIERS-Spring |
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745-751 |
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silicon photonics, TriPleX platform |
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In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array. |
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9017646 |
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1186 |
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Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Room temperature silicon detector for IR range coated with Ag2S quantum dots |
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Conference Article |
| Year |
2019 |
Publication |
IRMMW-THz |
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Ag2S quantum dots |
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A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications. |
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2162-2035 |
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978-1-5386-8285-2 |
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| Call Number |
8874267 |
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1286 |
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