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Albert Betz; Rita Boreiko; Yongdong Zhou; Jun Jhao; Yusuf Selamet; Yong Chang; Renganathan Ashokan; Charlie Bukcer; Sivalingam Sivanathan |
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Title |
HgCdTe photoconductive mixers for 3-15 terahertz |
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Conference Article |
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Year |
2003 |
Publication |
Proc. 14th Int. Symp. Space Terahertz Technol. |
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102-111 |
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Tucson, USA |
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Call Number |
RPLAB @ s @ HgCdTe_at3to15THz_fabr |
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338 |
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Author |
Grimes, P.; Kittara, P.; Yassin, G.; Withington, S.; Jacobs, K. |
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Title |
Investigation of the performance of a 700 GHz nline mixer |
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Conference Article |
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Year |
2003 |
Publication |
Proc. 14th Int. Symp. Space Terahertz Technol. |
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247 |
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Tucson, USA |
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RPLAB @ s @ nt_SIS_250at0p69THz |
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336 |
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Author |
Stéphane Claude |
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Title |
Sideband-separating SIS mixer for ALMA band 7, 275–370 GHz |
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Conference Article |
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Year |
2003 |
Publication |
Proc. 14th Int. Symp. Space Terahertz Technol. |
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41 |
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Tucson, USA |
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RPLAB @ s @ nt_SIS_60at0p34THz |
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333 |
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Author |
Amato, Michael J.; Benford, Dominic J.; Moseley, Harvey S.; Juan Roman |
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Title |
An engineering concept and enabling technologies for a large single aperture far-infrared observatory (SAFIR) |
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Conference Article |
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Year |
2003 |
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Proc. SPIE |
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4850 |
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1120-1131 |
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RPLAB @ s @ sun_shield_SAFIR_SPIE_2003 |
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339 |
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Author |
Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
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Title |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
Type |
Journal Article |
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Year |
2003 |
Publication |
J. of communications technol. & electronics |
Abbreviated Journal |
J. of communications technol. & electronics |
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Volume |
48 |
Issue |
6 |
Pages |
671-675 |
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Keywords |
NbN HEB mixers |
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Abstract |
Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer. |
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MAIK Nauka/Interperiodica, Birmingham, AL |
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1064-2269 |
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Notes |
https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) |
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Vakhtomin2003 |
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1522 |
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