| Records |
| Author |
Manus, M. K. Mc; Kash, J. A.; Steen, S. E.; Polonsky, S.; Tsang, J.C.; Knebel, D. R.; Huott, W. |
| Title |
PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis |
Type |
Journal Article |
| Year |
2000 |
Publication |
Microelectronics Reliability |
Abbreviated Journal |
Microelectronics Reliability |
| Volume |
40 |
Issue |
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Pages |
1353-1358 |
| Keywords |
SSPD, CMOS testing |
| Abstract |
Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors. |
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1054 |
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| Author |
Stellari, Franco; Song, Peilin |
| Title |
Testing of ultra low voltage CMOS microprocessors using the superconducting single-photon detector (SSPD) |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. 12th IPFA |
Abbreviated Journal |
Proc. 12th IPFA |
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Issue |
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Pages |
2 |
| Keywords |
SSPD, CMOS testing |
| Abstract |
In F. Stellari and P. Song (2004) the authors have shown a comparison among different detectors used for diagnosing integrated circuits (ICs) by means of the PICA method. In their experiments they used two versions of the SSPD detector (p-SSPD is a prototype version, while c-SSPD is the first commercially available generation of the detector as presented in W. K. Lo et al. (2002), as well as the imaging detector (S-25 photo-multiplier tube (PMT) as discussed in W. G. McMullan (1987)) used in the conventional PICA technique. A microprocessor chip fabricated in a 0.13 μm 1.2 V technology is used to show that c-SSPD provides a significant reduction in acquisition time for the collection of optical waveforms from chips running at very low. In this paper, the authors summarize the main results. |
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IEEE |
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0-7803-9301-5 |
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1055 |
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Steudle, Gesine A.; Schietinger, Stefan; Höckel, David; Dorenbos, Sander N.; Zadeh, Iman E.; Zwiller, Valery; Benson, Oliver |
| Title |
Measuring the quantum nature of light with a single source and a single detector |
Type |
Journal Article |
| Year |
2012 |
Publication |
Phys. Rev. A |
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86 |
Issue |
5 |
Pages |
053814 |
| Keywords |
SSPD, SNSPD, saturation count rates, dead time, dynamic range |
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An elementary experiment in optics consists of a light source and a detector. Yet, if the source generates nonclassical correlations such an experiment is capable of unambiguously demonstrating the quantum nature of light. We realized such an experiment with a defect center in diamond and a superconducting detector. Previous experiments relied on more complex setups, such as the Hanbury Brown and Twiss configuration, where a beam splitter directs light to two photodetectors, creating the false impression that the beam splitter is a fundamentally required element. As an additional benefit, our results provide a simplification of the widely used photon-correlation techniques. |
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American Physical Society |
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1089 |
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Hartogh, P.; Jarchow, C.; Lellouch, E.; de Val-Borro, M.; Rengel, M.; Moreno, R.; Medvedev, A. S.; Sagawa, H.; Swinyard, B. M.; Cavalié, T.; Lis, D. C.; BłÄ™cka, M. I.; Banaszkiewicz, M.; Bockelée-Morvan, D.; Crovisier, J.; Encrenaz, T.; Küppers, M.; Lara, L.-M.; Szutowicz, S.; Vandenbussche, B.; Bensch, F.; Bergin, E. A.; Billebaud, F.; Biver, N.; Blake, G. A.; Blommaert, J. A. D. L.; Cernicharo, J.; Decin, L.; Encrenaz, P.; Feuchtgruber, H.; Fulton, T.; de Graauw, T.; Jehin, E.; Kidger, M.; Lorente, R.; Naylor, D. A.; Portyankina, G.; Sánchez-Portal, M.; Schieder, R.; Sidher, S.; Thomas, N.; Verdugo, E.; Waelkens, C.; Whyborn, N.; Teyssier, D.; Helmich, F.; Roelfsema, P.; Stutzki, J.; LeDuc, H. G.; Stern, J. A. |
| Title |
Herschel/HIFI observations of Mars: First detection of O2 at submillimetre wavelengths and upper limits on HCl and H2O2 |
Type |
Journal Article |
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2010 |
Publication |
Astron. Astrophys. |
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521 |
Issue |
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Pages |
L49 |
| Keywords |
HEB mixer applications, HIFI, Herschel, planets and satellites: atmospheres / radiative transfer / submillimeter: general / molecular processes |
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We report on an initial analysis of Herschel/HIFI observations of hydrogen chloride (HCl), hydrogen peroxide (H2O2), and molecular oxygen (O2) in the Martian atmosphere performed on 13 and 16 April 2010 (Ls ~ 77°). We derived a constant volume mixing ratio of 1400 ± 120 ppm for O2 and determined upper limits of 200 ppt for HCl and 2 ppb for H2O2. Radiative transfer model calculations indicate that the vertical profile of O2 may not be constant. Photochemical models determine the lowest values of H2O2 to be around Ls ~ 75° but overestimate the volume mixing ratio compared to our measurements. |
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1093 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
Type |
Conference Article |
| Year |
2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
| Volume |
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Issue |
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Pages |
369-371 |
| Keywords |
silicon detector, quantum dot, IR, surface states |
| Abstract |
For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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1154 |
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