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Author Gousev, Yu. P.; Semenov, A. D.; Pechen, E. V.; Varlashkin, A. V.; Nebosis, R. S.; Renk K. F
Title Coupling of terahertz radiation to a high-Т(с) superconducting hot electron bolometer mixer Type Journal Article
Year 1996 Publication Abbreviated Journal Appl. Phys. Lett.,
Volume 69 Issue Pages 691-693
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Abstract We report on efficient coupling of THz radiation to a high-T(c) superconducting hot electron bolometer that is suitable for heterodyne detection. Our quasioptical system consisted of a planar self-complementary spiral antenna on a dielectric substrate clamped to an extended hyperhemispherical lens. The antenna was integrated into a co-planar line for broadband intermediate frequency matching. Measurements in the homodyne regime at a frequency of 2.5 THz showed a radiation pattern with a beam width of 1° and a coupling efficiency of 0.1. We measured, at an intermediate frequency of 1.5 GHz, an output noise temperature of'160 K and estimated for the device, operated in the heterodyne regime, a system noise temperature of 30 000 K. We also discuss possibilities of significant improvement of the sensitivity.
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Call Number (up) RPLAB @ atomics90 @ Serial 958
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Author Floet D. W.; Gao J. R.; Klapwijk T. M.; de Korte P. A. J.
Title Bias Dependence of the Thermal Time Constant in Nb Superconducting Diffusion-Cooled HEB Mixers Type Journal Article
Year 2000 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 77 Issue Pages 1719
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Abstract We present an experimental study of the intermediate frequency bandwidth of a Nb diffusion-cooled hot-electron bolometer mixer for different bias voltages. The measurements show that the bandwidth increases with increasing voltage. Analysis of the data reveals that this effect is mainly caused by a decrease of the intrinsic thermal time of the mixer and that the effect of electrothermal feedback through the intermediate frequency circuit is small. The results are understood using a qualitative model, which takes into account the different effective diffusion constants in the normal and superconducting domains.
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Call Number (up) RPLAB @ atomics90 @ Serial 971
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Author Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory
Title Low noise and wide bandwidth of NbN hot-electron bolometer mixers Type Journal Article
Year 2011 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 98 Issue Pages 033507 (1 to 3)
Keywords NbN HEB mixer
Abstract We report a record double sideband noise temperature of 600 K (5hν/kB) offered by a NbN hot-electron bolometer receiver at 2.5 THz. Allowing for standing wave effects, this value was found to be constant in the intermediate frequency range 1–7 GHz, which indicates that the mixer has an unprecedentedly large noise bandwidth in excess of 7 GHz. The insight into this is provided by gain bandwidth measurements performed at the superconducting transition. They show that the dependence of the bandwidth on the mixer length follows the model for an HEB mixer with diffusion and phonon cooling of the hot electrons.
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Call Number (up) RPLAB @ gujma @ Serial 638
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Author Baek, Burm; Lita, Adriana E.; Verma, Varun; Nam, Sae Woo
Title Superconducting a-WxSi1–x nanowire single-photon detector with saturated internal quantum efficiency from visible to 1850 nm Type Journal Article
Year 2011 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 98 Issue 25 Pages 3
Keywords SNSPD
Abstract We have developed a single-photon detector based on superconducting amorphous tungsten–silicon alloy (a-WxSi1–x) nanowire. Our device made from a uniform a-WxSi1–x nanowire covers a practical detection area (16 μm×16 μm) and shows high sensitivity featuring a plateau of the internal quantum efficiencies, i.e., efficiencies of generating an electrical pulse per absorbed photon, over a broad wavelength and bias range. This material system for superconducting nanowire detector technology could overcome the limitations of the prevalent nanowire devices based on NbN and lead to more practical, ideal single-photon detectors having high efficiency, low noise, and high count rates.
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Call Number (up) RPLAB @ gujma @ Serial 665
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Author Terai, Hirotaka; Miki, Shigehito; Yamashita, Taro; Makise, Kazumasa; Wang, Zhen
Title Demonstration of single-flux-quantum readout operation for superconducting single-photon detectors Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 97 Issue 11 Pages 3
Keywords SSPD
Abstract A readout circuit using superconducting single-flux-quantum (SFQ) circuits has been developed to realize an independently addressable array of superconducting single-photon detectors (SSPDs). We tested the SFQ readout circuits by connecting with SSPDs. The error rates of readout circuits were below 10–5 for input signal amplitude of greater than 18.2 μA. Detection efficiencies (DEs) for single-photon incidents were measured both with and without the connection of a readout circuit. The observed DEs traced almost the same curves regardless of the connection of the readout circuit, except that the SSPD is likely to latch by connecting the readout circuit.
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Call Number (up) RPLAB @ gujma @ Serial 654
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Author Tanner, M. G.; Natarajan, C. M.; Pottapenjara, V. K.; O'Connor, J. A.; Warburton, R. J.; Hadfield, R. H.; Baek, B.; Nam, S.; Dorenbos, S. N.; Bermúdez Ureña, E.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V.
Title Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 96 Issue 22 Pages 3
Keywords SNSPD
Abstract Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
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Call Number (up) RPLAB @ gujma @ Serial 655
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Author Marsili, Francesco; Najafi, Faraz; Herder, Charles; Berggren, Karl K.
Title Electrothermal simulation of superconducting nanowire avalanche photodetectors Type Journal Article
Year 2011 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 98 Issue 9 Pages 3
Keywords SNAP
Abstract We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.
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Call Number (up) RPLAB @ gujma @ Serial 658
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Author Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X.
Title Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers Type Journal Article
Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 95 Issue 19 Pages 3
Keywords 2DEG
Abstract The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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Call Number (up) RPLAB @ gujma @ Serial 673
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Author Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A.
Title Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 97 Issue 15 Pages 3
Keywords SSPD
Abstract We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Call Number (up) RPLAB @ gujma @ Serial 681
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Author Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio
Title Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 97 Issue 2 Pages 3
Keywords Annealing
Abstract We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
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Call Number (up) RPLAB @ gujma @ Serial 691
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Author Yates, S. J. C.; Baryshev, A. M.; Baselmans, J. J. A.; Klein, B.; Güsten, R.
Title Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors Type Journal Article
Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 95 Issue 4 Pages 3
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Abstract Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios.
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Call Number (up) RPLAB @ gujma @ Serial 697
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Author Hoevers, H. F. C.; Bento, A. C.; Bruijn, M. P.; Gottardi, L.; Korevaar, M. A. N.; Mels, W. A.; de Korte, P. A. J.
Title Thermal fluctuation noise in a voltage biased superconducting transition edge thermometer Type Journal Article
Year 2000 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 77 Issue 26 Pages 4421-4424
Keywords TES; bolometer; thermal fluctuation noise; TFN
Abstract The current noise at the output of a microcalorimeter with a voltage biased superconducting transition edge thermometer is studied in detail. In addition to the two well-known noise sources: thermal fluctuation noise from the heat link to the bath and Johnson noise from the resistive thermometer, a third noise source strongly correlated with the steepness of the thermometer is required to fit the measured noise spectra. Thermal fluctuation noise, originating in the thermometer itself, fully explains the additional noise. A simple model provides quantitative agreement between the observed and calculated noise spectra for all bias points in the superconducting transition.
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Call Number (up) RPLAB @ gujma @ Serial 759
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Author Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; Leduc, H. G.
Title Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers Type Journal Article
Year 1998 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 72 Issue 12 Pages 1516-1518
Keywords HEB mixer; thermal fluctuation noise; TFN
Abstract A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band).
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Call Number (up) RPLAB @ gujma @ Serial 760
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Author Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G.
Title The electron-phonon relaxation time in thin superconducting titanium nitride films Type Journal Article
Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 103 Issue 25 Pages 252602 (1 to 4)
Keywords disordered TiN films, electron-phonon relaxation time
Abstract We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.
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Call Number (up) RPLAB @ kovalyuk @ Serial 941
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Author Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M.
Title Low noise superconducting single photon detectors on silicon Type Journal Article
Year 2008 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 93 Issue 13 Pages 131101
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Call Number (up) RPLAB @ s @ Serial 436
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