|   | 
Details
   web
Records
Author Florya, I. N.; Korneeva, Y. P.; Sidorova, M. V.; Golikov, A. D.; Gaiduchenko, I. A.; Fedorov, G. E.; Korneev, A. A.; Voronov, B. M.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R.
Title Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs Type Conference Article
Year 2015 Publication EPJ Web of Conferences Abbreviated Journal EPJ Web of Conferences
Volume 103 Issue Pages 10004 (1 to 2)
Keywords SSPD, SNSPD
Abstract We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1351
Permanent link to this record
 

 
Author Semenov, A.; Richter, H.; Hübers, H.-W.; Petrenko, D.; Tretyakov, I.; Ryabchun, S.; Finkel, M.; Kaurova, N.; Gol’tsman, G.; Risacher, C.; Ricken, O.; Güsten, R.
Title Optimization of the intermediate frequency bandwidth in the THz HEB mixers Type Abstract
Year 2014 Publication Proc. 25th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 25th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 54
Keywords NbN HEB mixer
Abstract We report on the studies of the intermediate frequency (IF) bandwidth of quasi-optically coupled NbN hot-electron bolometer (HEB) mixers which are aimed at the optimization of the mixer performance at terahertz frequencies. Extension of the IF bandwidth due to the contribution of electron diffusion to the heat removal from NbN microbolometers has been already demonstrated for NbN HEBs at subterahertz frequencies. However, reducing the size of the microbolometer causes degradation of the noise temperature. Using in-situ multilayer manufacturing process we succeeded to improve the transparency of the contacts for electrons which go away from microbolometer to the metallic antenna. The improved transparency and hence coupling efficiency counterbalances the noise temperature degradation. HEB mixers were tested in a laboratory heterodyne receiver with a narrow-band cold filter which allowed us to eliminate direct detection. We used a local oscillator with a quantum cascade laser (QCL) at a frequency of 4.745 THz [1] which was developed for the H-Channel of the German Receiver for Astronomy at Terahertz frequencies (GREAT). Both the noise and gain bandwidth were measured in the IF range from 0.5 to 8 GHz using the hot-cold technique and preliminary calibrated IF analyzer with a tunable microwave filter. For optimized HEB geometry we found the noise bandwidth as large as 7 GHz. We compare our results with the conventional and the hot-spot mixer models and show that further extension of the IF bandwidth should be possible via improving the sharpness of the superconducting transition. The cross characterization of the HEB mixer was performed in the test bed of GREAT at the Max-Planck-Institut für Radioastronomie with the same QCL LO and delivered results which were consistent with the laboratory studies.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1359
Permanent link to this record
 

 
Author Флоря, И. Н.
Title Ультрабыстрый однофотонный детектор для оптических применений Type Conference Article
Year 2009 Publication Науч. сессия МИФИ Abbreviated Journal Науч. сессия МИФИ
Volume Issue Pages 45-46
Keywords SSPD
Abstract Представлен сверхпроводниковый однофотонный детектор (SSPD) на основе ультратонкой пленки NbN, обладающий рекордным быстродействием. Активный элемент выполнен в виде N сверхпроводящих полосок соединенных параллельно, покрывающих площадку размером 10 мкм х 10 мкм. Для SSPD с N=12 длительность импульса напряжения составляет 200 пс. Полученные результаты открывают путь к детекторам обладающими скоростью счета свыше 1 ГГц, что делает SSPDs весьма привлекательными во многих применениях, в частности для квантовой криптографии. SSPD хорошо согласуется с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-5-7262-1042-1 Medium
Area Expedition Conference
Notes УДК 533.14(06)+004.056(06) Фотоника и информационная оптика Approved no
Call Number (up) Serial 1145
Permanent link to this record
 

 
Author Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G.
Title Planar Schottky diode with a Γ-shaped anode suspended bridge Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012154
Keywords Schottky diode, GaAs, InP substrate
Abstract In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1152
Permanent link to this record
 

 
Author Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G.
Title Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012156
Keywords Shottky diode, THz, direct detector, multipixel camera
Abstract In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1153
Permanent link to this record