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Shurakov, Alexander; Maslennikov, Sergey; Tong, Cheuk-yu E.; Gol’tsman, Gregory |
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Title |
Performance of an HEB direct detector utilizing a microwave reflection readout scheme |
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Conference Article |
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Year |
2015 |
Publication |
Proc. 26th Int. Symp. Space Terahertz Technol. |
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Proc. 26th Int. Symp. Space Terahertz Technol. |
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36 |
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HEB detector |
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We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014. |
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1158 |
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Kovalyuk, V.; Kahl, O.; Ferrari, S.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. |
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On-chip single-photon spectrometer for visible and infrared wavelength range |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051045 |
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single-photon spectrometer |
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Here we show our latest progress in the field of a single-photon spectrometer for the visible and infrared wavelengths ranges implementation. We consider three different on-chip approaches: a coherent spectrometer with a low power of the heterodyne, a coherent spectrometer with a high power of the heterodyne, and an eight-channel single-photon spectrometer for direct detection. Along with high efficiency, spectrometers show high detection efficiency and temporal resolution through the use of waveguide integrated superconducting nanowire single-photon detectors. |
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1742-6588 |
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1197 |
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Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Title |
Gap frequency and photon absorption in a hot electron bolometer |
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Conference Article |
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2016 |
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Proc. 27th Int. Symp. Space Terahertz Technol. |
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Proc. 27th Int. Symp. Space Terahertz Technol. |
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121 |
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NbN HEB; Si membrane |
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The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015. |
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1204 |
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Huebers, H.-W.; Schubert, J.; Semenov, A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Schwaab, G. W. |
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Title |
NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers |
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1999 |
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Proc. SPIE |
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Proc. SPIE |
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3828 |
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410-416 |
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NbN HEB mixers |
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We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed. |
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Spie |
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Chamberlain, J.M. |
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Terahertz Spectroscopy and Applications II |
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1477 |
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Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
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Electron energy relaxation in disordered superconducting NbN films |
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2020 |
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Phys. Rev. B |
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Phys. Rev. B |
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102 |
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5 |
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054501 (1 to 15) |
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NbN SSPD, SNSPD, HEB, bandwidth, relaxation time |
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We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material. |
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1266 |
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