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Ryabchun, S. A., Tretyakov, I. V., Finkel, M. I., Maslennikov, S. N., Kaurova, N. S., Seleznev, V. A., et al. (2009). NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling. In Proc. 20th Int. Symp. Space Terahertz Technol. (pp. 151–154). Charlottesville, USA.
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Tretyakov, I. V., Ryabchun, S. A., Maslennikov, S. N., Finkel, M. I., Kaurova, N. S., Seleznev, V. A., et al. (2008). NbN HEB mixer: fabrication, noise temperature reduction and characterization. In Proc. Basic problems of superconductivity. Moscow-Zvenigorod.
Abstract: We demonstrate that in the terahertz region superconducting hot-electron mixers offer the lowest noise temperature, opening the possibility of using HTS's in the future to fabricate these devices. Specifically, a noise temperature of 950 K was measured for the receiver operating at 2.5 THz with a NbN HEB mixer, and a gain bandwidth of 6 GHz was measured at 300 GHz near Tc for the same mixer.
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Финкель, М. И. (2006). Терагерцовые смесители на эффекте электронного разогрева в ультратонких плёнках NbN и NbTiN. Ph.D. thesis, , .
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Рябчун, С. А. (2009). Широкополосные высокостабильные терагерцовые смесители на горячих электронах из тонких сверхпроводниковых пленок NbN. Ph.D. thesis, , .
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Ryabchun, S. A., Tretyakov, I. V., Pentin, I. V., Kaurova, N. S., Seleznev, V. A., Voronov, B. M., et al. (2009). Low-noise wide-band hot-electron bolometer mixer based on an NbN film. Radiophys. Quant. Electron., 52(8), 576–582.
Abstract: We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
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