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Sidorova, M., Semenov, A., Hübers, H. - W., Kuzmin, A., Doerner, S., Ilin, K., et al. (2018). Timing jitter in photon detection by straight superconducting nanowires: Effect of magnetic field and photon flux. Phys. Rev. B, 98(13), 134504 (1 to 14).
Abstract: We studied the effects of the external magnetic field and photon flux on timing jitter in photon detection by straight superconducting NbN nanowires. At two wavelengths 800 and 1560 nm, statistical distribution in the appearance times of photon counts exhibits Gaussian shape at small times and an exponential tail at large times. The characteristic exponential time is larger for photons with smaller energy and increases with external magnetic field while variations in the Gaussian part of the distribution are less pronounced. Increasing photon flux drives the nanowire from the discrete quantum detection regime to the uniform bolometric regime that averages out fluctuations of the total number of nonequilibrium electrons created by the photon and drastically reduces jitter. The difference between standard deviations of Gaussian parts of distributions for these two regimes provides the measure for the strength of electron-number fluctuations; it increases with the photon energy. We show that the two-dimensional hot-spot detection model explains qualitatively the effect of magnetic field.
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Emelianov, A. V., Nekrasov, N. P., Moskotin, M. V., Fedorov, G. E., Otero, N., Romero, P. M., et al. (2021). Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation. Adv. Electron. Mater., 7(3), 2000872.
Abstract: The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
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Калмыков, Б., & Фридкин, Г. (1970). Сольфеджио. Часть 2. Двухголосие (Е. Дурандина, Ed.). Москва: Музыка.
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Czerny, C., & Germer, H. (1900). Selected pianoforte-studies. Edition nr. 300. Hansen.
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Fedder, H., Oesterwind, S., Wick, M., Olbrich, F., Michler, P., Veigel, T., et al. (2018). Characterization of electro-optical devices with low jitter single photon detectors – towards an optical sampling oscilloscope beyond 100 GHz. In ECOC (pp. 1–3).
Abstract: We showcase an optical random sampling scope that exploits single photon counting and apply it to characterize optical transceivers. We study single photon detectors with a jitter down to 40 ps. The method can be extended beyond 100 GHz.
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