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Ptitsina N. G.; Chulkova G. M.; Il'in K. S.; Sergeev A. V.; Pochinkov F. S.; Gershenzon E. M. |
Title |
Superconductivity has been found in a number of new compounds between the non-superconducting transition elements and nonmetals such as Si, Ge, and Te. These findings have suggested possible criteria for superconductivity in both elements and compounds. |
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Journal Article |
Year |
1997 |
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Phys. Rev. B |
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Phys. Rev. B |
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56 |
Issue |
16 |
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The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path L=1.5– 10 nm has been measured at 4.2–300 K. The resistance of all the films contains a T^2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference „M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 ~1987! @Sov. Phys. JETP 65, 1291 ~1987!#…, we obtain constants of nteraction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electronphonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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RPLAB @ phisix @ |
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988 |
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Author |
Boreman, Glenn D. |
Title |
Infrared microantennas |
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Journal Article |
Year |
1997 |
Publication |
SPIE |
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SPIE |
Volume |
3110 |
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Pages |
882-885 |
Keywords |
optical antennas |
Abstract |
We present results of mesurments of the polarization response of asymetric spiral antennas coupled Ni-NiO-Ni diodes, over the wavelength range 10.2 to 10.7 μm. The feed structure of the antenna imposes an elliptical polarization singature that is different from the circular polarization expected from a symmetric spiral. We develop a lossy-transmission-line model yielding the measured polarization response. A combination of a balanced and an unbalanced mode is required. Reflected current waves from the arm ends are significant. |
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RPLAB @ gujma @ |
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755 |
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Author |
Kroug, M.; Yagoubov, P.; Gol'tsman, G.; Kollberg, E. |
Title |
NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies |
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Conference Article |
Year |
1997 |
Publication |
Inst. Phys. Conf. Ser. |
Abbreviated Journal |
Inst. Phys. Conf. Ser. |
Volume |
1 |
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Pages |
405-408 |
Keywords |
NbN HEB mixers |
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Veldhoven |
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Bristol |
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0951-3248 |
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3rd Eur. Conf. on Applied Superconductivity |
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1600 |
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Tong, C. Y. E.; Chen, L.; Blundell, R. |
Title |
Theory of distributed mixing and amplification in a superconductingquasi-particle nonlinear transmission line |
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Journal Article |
Year |
1997 |
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IEEE Trans. Microw. Theory Techn. |
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45 |
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7 |
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1086-1092 |
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274 |
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Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E. |
Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates |
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Conference Article |
Year |
1997 |
Publication |
Proc. 8th Int. Symp. Space Terahertz Technol. |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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245-257 |
Keywords |
NbN HEB mixers, fabrication process |
Abstract |
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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276 |
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