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Author |
Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. |
Title |
Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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Journal Article |
Year |
1998 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
73 |
Issue |
19 |
Pages |
2814-2816 |
Keywords |
NbN HEB mixers, noise temperature, local oscillator power |
Abstract |
In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW. |
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911 |
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Klapwijk, T. M.; Barends, R.; Gao, J. R.; Hajenius, M.; Baselmans, J. J. A. |
Title |
Improved superconducting hot-electron bolometer devices for the THz range |
Type |
Conference Article |
Year |
2004 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
5498 |
Issue |
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Pages |
129-139 |
Keywords |
HEB mixer distributed model, numerical model |
Abstract |
Improved and reproducible heterodyne mixing (noise temperatures of 950 K at 2.5 THz) has been realized with NbN based hot-electron superconducting devices with low contact resistances. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, has been used to understand the physical conditions during the mixing process. We find that the mixing is predominantly due to the exponential rise of the local resistivity as a function of electron temperature. |
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Invited talk, Recommended by Klapwijk |
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912 |
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Author |
Gurevich, A. Vl.; Mints, R. G. |
Title |
Self-heating in normal metals and superconductors |
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Journal Article |
Year |
1987 |
Publication |
Rev. Mod. Phys. |
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Volume |
59 |
Issue |
4 |
Pages |
941-1000 |
Keywords |
HEB, Joule self-heating effect |
Abstract |
This review is devoted to the physics of current-carrying superconductors and normal metals having two or more stable states sustained by Joule self-heating. The creation, propagation, and localization of electrothermal domains and switching waves leading to the transition from one stable state to another in uniform and nonuniform samples are treated in detail. The connection between thermal bistability and hysteresis, dropping and stepped current-voltage characteristics, self-induced oscillations of current and voltage, selfreplication of electrothermal domains, and the formation of periodic and stochastic resistive structures are considered. |
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917 |
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Pekker, David; Shah, Nayana; Sahu, Mitrabhanu; Bezryadin, Alexey; Goldbart, Paul M. |
Title |
Stochastic dynamics of phase-slip trains and superconductive-resistive switching in current-biased nanowires |
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Journal Article |
Year |
2009 |
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Phys. Rev. B |
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80 |
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214525 (1 to 17) |
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superconducting nanowire, phase-slip, order parameter, HEB distributed model, HEB model |
Abstract |
Superconducting nanowires fabricated via carbon-nanotube templating can be used to realize and study quasi-one-dimensional superconductors. However, measurement of the linear resistance of these nanowires have been inconclusive in determining the low-temperature behavior of phase-slip fluctuations, both quantal and thermal. Thus, we are motivated to study the nonlinear current-voltage characteristics in current-biased nanowires and the stochastic dynamics of superconductive-resistive switching, as a way of probing phase-slip events. In particular, we address the question: can a single phase-slip event occurring somewhere along the wire—during which the order-parameter fluctuates to zero—induce switching, via the local heating it causes? We explore this and related issues by constructing a stochastic model for the time evolution of the temperature in a nanowire whose ends are maintained at a fixed temperature. We derive the corresponding master equation as a tool for evaluating and analyzing the mean switching time at a given value of current (smaller than the depairing critical current). The model indicates that although, in general, several phase-slip events are necessary to induce switching via a thermal runaway, there is indeed a regime of temperatures and currents in which a single event is sufficient. We carry out a detailed comparison of the results of the model with experimental measurements of the distribution of switching currents, and provide an explanation for the rather counterintuitive broadening of the distribution width that is observed upon lowering the temperature. Moreover, we identify a regime in which the experiments are probing individual phase-slip events, and thus offer a way of unearthing and exploring the physics of nanoscale quantum tunneling of the one-dimensional collective quantum field associated with the superconducting order parameter. |
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Recommended by Klapwijk |
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923 |
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Author |
Phillips, T. G.; Jefferts, K. B. |
Title |
A low temperature bolometer heterodyne receiver for Millimeter wave astronomy |
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Journal Article |
Year |
1973 |
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Rev. Sci. Instrum. |
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Rev. Sci. Instrum. |
Volume |
44 |
Issue |
8 |
Pages |
1009-1014 |
Keywords |
InSb HEB mixer |
Abstract |
Liquid helium cooled InSb hot electronbolometers are used in a balanced mixer configuration as detectors for an imagelessmicrowave receiver. The system is designed for mounting at the prime focus of the National Radio Astronomy Observatory (NRAO) 11 m antenna at Kitt Peak, Arizona, and is suitable for the study of rotational line spectra of interstellar gas molecules. Currently the operating frequency is in the 90–140 GHz band where the double sideband system noise temperature is 250 K. |
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Recommended by Klapwijk |
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927 |
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