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Author Tong, C. Y. E.; Chen, L.; Blundell, R.
Title Theory of distributed mixing and amplification in a superconductingquasi-particle nonlinear transmission line Type Journal Article
Year 1997 Publication IEEE Trans. Microw. Theory Techn. Abbreviated Journal
Volume 45 Issue 7 Pages 1086-1092
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Call Number Serial 274
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Author Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E.
Title Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates Type Conference Article
Year 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 8th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 245-257
Keywords NbN HEB mixers, fabrication process
Abstract The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
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Call Number Serial 276
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Author Kawamura, J.; Blundell, R.; Tong, C-Y. E.; Gol'tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S.
Title Phonon-cooled NbN HEB mixers for submillimeter wavelengths Type Conference Article
Year 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 8th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 23-28
Keywords waveguide NbN HEB mixers
Abstract The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz.
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Call Number Serial 275
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Author Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S.
Title Gain and noise bandwidth of NbN hot-electron bolometric mixers Type Journal Article
Year 1997 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 70 Issue 24 Pages 3296-3298
Keywords NbN HEB mixers, conversion loss, conversion gain, U-factor technique
Abstract We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
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Call Number Serial 279
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Author Kerr, A. R.; Feldman, M. J.; Pan, S.-K.
Title Receiver noise temperature, the quantum noise limit, and zero–point fluctuations Type Conference Article
Year 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 101-111
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Call Number Serial 277
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Author de Lange, G.; Hu, Q.; Huang, H.; Lichtenberger, A. W.
Title Development of a 170-210 GHz 3×3 micromachined SIS imaging array Type Conference Article
Year 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 518
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Call Number Serial 278
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Author Boreman, Glenn D.
Title Infrared microantennas Type Journal Article
Year 1997 Publication SPIE Abbreviated Journal SPIE
Volume 3110 Issue Pages 882-885
Keywords optical antennas
Abstract We present results of mesurments of the polarization response of asymetric spiral antennas coupled Ni-NiO-Ni diodes, over the wavelength range 10.2 to 10.7 μm. The feed structure of the antenna imposes an elliptical polarization singature that is different from the circular polarization expected from a symmetric spiral. We develop a lossy-transmission-line model yielding the measured polarization response. A combination of a balanced and an unbalanced mode is required. Reflected current waves from the arm ends are significant.
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Call Number RPLAB @ gujma @ Serial 755
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Author
Title ГОСТ Р 50995.0.1-96. Технологическое обеспечение создания продукции. Основные положения Type Book Whole
Year 1997 Publication Abbreviated Journal
Volume Issue Pages
Keywords gost, detproj
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Call Number Serial 873
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Author Pothier, H.; Guéron, S.; Birge, Norman O.; Esteve, D.; Devoret, M. H.
Title Energy distribution function of quasiparticles in mesoscopic wires Type Journal Article
Year 1997 Publication Phys. Rev. Lett. Abbreviated Journal
Volume 79 Issue 18 Pages 3490-3493
Keywords tunnel probe, metallic nanowire, diffusive wire, diffusive nanowire
Abstract We have measured with a tunnel probe the energy distribution function of Landau quasiparticles in metallic diffusive wires connected to two reservoir electrodes, with an applied bias voltage. The distribution function in the middle of a 1.5-μm-long wire resembles the half sum of the Fermi distributions of the reservoirs. The distribution functions in 5-μm-long wires are more rounded, due to interactions between quasiparticles during the longer diffusion time across the wire. From the scaling of the data with the bias voltage, we find that the scattering rate between two quasiparticles varies as <c9><203a>–2, where <c9><203a> is the energy transferred.
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Call Number Serial 921
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Author Ptitsina N. G.; Chulkova G. M.; Il'in K. S.; Sergeev A. V.; Pochinkov F. S.; Gershenzon E. M.
Title Superconductivity has been found in a number of new compounds between the non-superconducting transition elements and nonmetals such as Si, Ge, and Te. These findings have suggested possible criteria for superconductivity in both elements and compounds. Type Journal Article
Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 56 Issue 16 Pages
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Abstract The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path L=1.5– 10 nm has been measured at 4.2–300 K. The resistance of all the films contains a T^2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference „M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 ~1987! @Sov. Phys. JETP 65, 1291 ~1987!#…, we obtain constants of nteraction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electronphonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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Call Number RPLAB @ phisix @ Serial 988
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Author Gousev, Y. P.; Semenov, A. D.; Goghidze, I. G.; Pechen, E. V.; Varlashkin, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F.
Title Current dependent noise in a YBa2Cu3O7-δ hot-electron bolometer Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages 3556-3559
Keywords YBCO HTS HEB mixers
Abstract We investigated the output noise of a YBa2Cu3O7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources.
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ISSN 1051-8223 ISBN Medium
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Call Number Serial 1592
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Author Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride Type Journal Article
Year 1997 Publication Tech. Phys. Lett. Abbreviated Journal Tech. Phys. Lett.
Volume 23 Issue 6 Pages 486-488
Keywords NbN KID
Abstract A new type of fast detector is proposed, whose operation is based on the variation of the kinetic inductance of a superconducting film caused by nonequilibrium quasiparticles created by the electromagnetic radiation. The speed of the detector is determined by the rate of multiplication of photo-excited quasiparticles, and is nearly independent of the temperature, being less than 1 ps for NbN. Models based on the Owen-Scalapino scheme give a good description of the experimentally determined dependence of the power-voltage sensitivity of the detector on the modulation frequency. The lifetime of the quasiparticles is determined, and it is shown that the reabsorption of nonequilibrium phonons by the condensate has a substantial effect even in ultrathin NbN films 5 nm thick, and results in the maximum possible quantum yield. A low concentration of equilibrium quasiparticles and a high quantum yield result in a detectivity D*=1012 W−1·Hz1/2 at a temperature T=4.2 K and D*=1016 W−1·cm· Hz1/2 at T=1.6 K.
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ISSN 1063-7850 ISBN Medium
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Call Number Serial 1593
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Author Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R.
Title Noise characteristics of a NbN hot-electron mixer at 2.5 THz Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages 3572-3575
Keywords NbN HEB mixers
Abstract The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation.
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Call Number Serial 1594
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Author Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.
Title 2.5 THz NbN hot electron mixer with integrated tapered slot antenna Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages 3548-3551
Keywords NbN HEB mixers
Abstract A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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Call Number Serial 1595
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Author Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M.
Title Fast NbN superconducting switch controlled by optical radiation Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages 3734-3737
Keywords NbN superconducting switch
Abstract The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits.
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Call Number Serial 1596
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