Zhang, J., Slysz, W., Verevkin, A., Okunev, O., Chulkova, G., Korneev, A., et al. (2003). Response time characterization of NbN superconducting single-photon detectors. IEEE Trans. Appl. Supercond., 13(2), 180–183.
Abstract: We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps.
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Korneev, A., Lipatov, A., Okunev, O., Chulkova, G., Smirnov, K., Gol’tsman, G., et al. (2003). GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits. Microelectronic Engineering, 69(2-4), 274–278.
Abstract: We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics.
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Lipatov, A., Okunev, O., Smirnov, K., Chulkova, G., Korneev, A., Kouminov, P., et al. (2002). An ultrafast NbN hot-electron single-photon detector for electronic applications. Supercond. Sci. Technol., 15(12), 1689–1692.
Abstract: We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm.
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Verevkin, A., Xu, Y., Zheng, X., Williams, C., Sobolewski, R., Okunev, O., et al. (2001). Superconducting NbN-based ultrafast hot-electron single-photon detector for infrared range. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 462–468).
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Gol’tsman, G. N., Okunev, O., Chulkova, G., Lipatov, A., Semenov, A., Smirnov, K., et al. (2001). Picosecond superconducting single-photon optical detector. Appl. Phys. Lett., 79(6), 705–707.
Abstract: We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts.
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