Shcherbatenko, M., Tretyakov, I., Lobanov, Y., Maslennikov, S. N., Kaurova, N., Finkel, M., et al. (2016). Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers. Appl. Phys. Lett., 109(13), 132602.
Abstract: We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device.
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Klapwijk, T. M., & Semenov, A. V. (2017). Engineering physics of superconducting hot-electron bolometer mixers. IEEE Trans. THz Sci. Technol., 7(6), 627–648.
Abstract: Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments.
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Titova, N., Kardakova, A. I., Tovpeko, N., Ryabchun, S., Mandal, S., Morozov, D., et al. (2017). Slow electron–phonon cooling in superconducting diamond films. IEEE Trans. Appl. Supercond., 27(4), 1–4.
Abstract: We have measured the electron-phonon energy-relaxation time, τ eph , in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T -2-dependence. The data are consistent with the values of τ eph previously reported for single-crystal boron-doped diamond films epitaxially grown on diamond substrate. Such a noticeable slow electron-phonon relaxation in boron-doped diamond, in combination with a high normal-state resistivity, confirms a potential of superconducting diamond for ultrasensitive superconducting bolometers.
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Hajenius, M., Yang, Z. Q., Gao, J. R., Baselmans, J. J. A., Klapwijk, T. M., Voronov, B., et al. (2007). Optimized sensitivity of NbN hot electron bolometer mixers by annealing. IEEE Trans. Appl. Supercond., 17(2), 399–402.
Abstract: We report that the heterodyne sensitivity of superconducting hot-electron bolometers (HEBs) increases by 25-30% after annealing at 85degC in high vacuum. The devices studied are twin-slot antenna coupled mixers with a small area NbN bridge of 1 mum times 0.15 mum, above which there is a SiO 2 passivation layer. The mixer noise temperature, gain, and resistance versus temperature curve of a HEB before and after annealing are compared and analysed. We show that the annealing reduces the intrinsic noise of the mixer by 37% and makes the superconducting transition of the bridge and the contacts sharper. We argue that the reduction ofthe noise is mainly due to the improvement of the transparency of the contact/film interface. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and at a bath temperature of 4.2 K.
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Tretyakov, I., Maslennikov, S., Semenov, A., Safir, O., Finkel, M., Ryabchun, S., et al. (2015). Impact of operating conditions on noise and gain bandwidth of NbN HEB mixers. In Proc. 26th Int. Symp. Space Terahertz Technol. (39).
Abstract: Hot-electron bolometer mixers (HEB’s) are the most promising devices as mixing element for terahertz spectroscopy and astronomy at frequencies beyond 1.4 THz. They have a low noise temperature and low demands on local oscillator (LO) power. 1,2 An important limitation is the IF bandwidth, of the order of a few GHz, and which in principle depends on energy relaxation due to electron- phonon processes and on diffusion-cooling. It has been proposed by Prober that a reduction in length of the HEB would lead to an increased bandwidth. 3 This appeared to be achieved by Tretyakov et al by measuring the gain bandwidth close to the critical temperature of the NbN. 2 Unfortunately, the noise bandwidth of similar devices operated at temperatures around 4.2 K appear not depend on the length. The fundamental problem to be addressed is the position-dependent superconducting state of the HEB- devices under operating conditions, which determines the conditions for the cooling of the hot quasiparticles. Some progress has been made by Barends et al in a semi-empirical model to describe the I,V curves under operating conditions at a bath temperature around 4.2 K. 4 In more recent work Vercruyssen et al have analyzed the I,V curve, without any LO-equivalent bias, of a model NSN system. 5 This work suggests that the most appropriate model for an HEB under operating conditions is that of a potential-well in the superconducting gap in the center of the NbN, analogous the bimodal superconducting state described by Vercruyssen et al. Hot quasiparticles in the well can not diffuse out and can only cool by electron-phonon processes, those with higher energies than the heights of the walls of the well can diffuse out. Using this working hypothesis we have carried out experiments on a sub-micrometer NbN bridge connected to a gold (Au) planar spiral antenna. An in situ process is used to deposit Au on NbN. The Au is removed in the center to define the uncovered NbN, which will act as the superconducting mixer itself. The antenna is deposited on the remaining Au layer on the NbN. The Au contacts suppress the energy gap of the NbN film located underneath the gold layer 7,8 . The measured resistive transition is shown in Fig.1. It clearly shows a T c of the bilayer at 6.2 K and the resistive transition of the NbN itself around 9 K. In addition we show the measured noise bandwidth (red squares) for different bath temperatures. Clearly the noise bandwidth increases strongly by increasing the bath temperature from 5 K to 8 K, up to 13 GHz. We interpret this pattern as evidence for improved out-diffusion of hot electrons due to normal banks and a shallow superconducting potential well compared to k B T. As expected the noise temperature in this regime is much bigger than when biased at 4.2 K. R EFERENCES 1 W. Zhang, P. Khosropanah, J. R. Gao, E. L. Kollberg, K. S. Yngvesson, T. Bansal, R. Barends, and T. M. Klapwijk Appl. Phys. Lett. 96, 111113, (2010). 2 Ivan Tretyakov, Sergey Ryabchun, Matvey Finkel, Anna Maslennikova, Natalia Kaurova, Anastasia Lobastova, Boris Voronov, and Gregory Gol’tsman Appl. Phys. Lett. 98, 033507 (2011). 3 D. E. Prober, Appl. Phys. Lett. 62, 2119 (1992). 4 R. Barends, M. Hajenius, J. R. Gao, and T. M. Klapwijk, Appl. Phys. Lett. 87, 263506 (2005). 5 N. Vercruyssen, T. G. A. Verhagen, M. G. Flokstra, J. P. Pekola, and T. M. Klapwijk Physical Review B 85, 224503 (2012).
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Kardakova, A., Shishkin, A., Semenov, A., Goltsman, G. N., Ryabchun, S., Klapwijk, T. M., et al. (2016). Relaxation of the resistive superconducting state in boron-doped diamond films. Phys. Rev. B, 93(6), 064506.
Abstract: We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.
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Zolotov, P. I., Semenov, A. V., Divochiy, A. V., Goltsman, G. N., Romanov, N. R., & Klapwijk, T. M. (2021). Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN. IEEE Trans. Appl. Supercond., 31(5), 1–5.
Abstract: We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated.
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Baeva, E. M., Sidorova, M. V., Korneev, A. A., Smirnov, K. V., Divochy, A. V., Morozov, P. V., et al. (2018). Thermal properties of NbN single-photon detectors. Phys. Rev. Applied, 10(6), 064063 (1 to 8).
Abstract: We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
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Finkel, M., Thierschmann, H., Galatro, L., Katan, A. J., Thoen, D. J., de Visser, P. J., et al. (2017). Performance of THz components based on microstrip PECVD SiNx technology. IEEE Trans. THz Sci. Technol., 7(6), 765–771.
Abstract: We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.
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Finkel, M., Thierschmann, H. R., Galatro, L., Katan, A. J., Thoen, D. J., de Visser, P. J., et al. (2016). Branchline and directional THz coupler based on PECVD SiNx-technology. In 41st IRMMW-THz.
Abstract: A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.
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Kardakova, A. I., Coumou, P. C. J. J., Finkel, M. I., Morozov, D. V., An, P. P., Goltsman, G. N., et al. (2015). Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films. IEEE Trans. Appl. Supercond., 25(3), 1–4.
Abstract: We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
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Korneeva, Y. P., Vodolazov, D. Y., Semenov, A. V., Florya, I. N., Simonov, N., Baeva, E., et al. (2018). Optical single photon detection in micron-scaled NbN bridges. arXiv:1802.02881v1 [cond-mat.supr-con].
Abstract: We demonstrate experimentally that single photon detection can be achieved in micron-wide NbN bridges, with widths ranging from 0.53 μm to 5.15 μm and for photon-wavelengths from 408 nm to 1550 nm. The microbridges are biased with a dc current close to the experimental critical current, which is estimated to be about 50 % of the theoretically expected depairing current. These results offer an alternative to the standard superconducting single-photon detectors (SSPDs), based on nanometer scale nanowires implemented in a long meandering structure. The results are consistent with improved theoretical modelling based on the theory of non-equilibrium superconductivity including the vortex-assisted mechanism of initial dissipation.
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Korneeva, Y., Vodolazov, D., Florya, I., Manova, N., Smirnov, E., Korneev, A., et al. (2018). Single photon detection in micron scale NbN and α-MoSi superconducting strips. In EPJ Web Conf. (Vol. 190, 04010 (1 to 2)).
Abstract: We experimentally demonstrate the single photon detection in straight micrometer-wide NbN and α-MoSi bridges. Width of the bridges is 2 µm, while the wavelength of the photon changes from 408 to 1550 nm and critical current exceeds 50% of the depairing current. Obtained results offer the alternative route for design of detectors without resonator and meander structure and indirectly confirm vortex assisted mechanism of single photon detection.
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Baselmans, J. J. A., de Visser, P. J., Yates, S. J. C., Bueno, J., Jansen, R. M. J., Endo, A., et al. (2014). Large format, background limited arrays of kinetic inductance detectors for sub-mm astronomy. In Proc. 25th Int. Symp. Space Terahertz Technol. (64).
Abstract: Kinetic Inductance detectors have held a promise for the last decade to enable very large arrays, in excess of 10.000 pixels, with background limited sensitivity for ground- and Space Based sub-mm observatories. First we present the development of the detector chips of the A-MKID instrument: These chips contain up to 5400 detector pixel divided over up to 5 readout lines for the 350 GHz and 850 GHz atmospheric windows. The individual detectors are lens antenna coupled KIDs made of NbTiN and Aluminium that reach photon noise limited sensitivity at sky loading levels in excess of a few fW per pixel using either phase readout or amplitude readout. The ability to use phase readout is crucial as it reduces the requirements on the readout electronics of the instrument. Cross coupling between the KID resonators was mitigated by a combination of numerical simulations and a suitable position encoding of the readout resonance frequencies of the individual pixels. Beam pattern measurements are performed to demonstrate the absence of any cross talk due to resonator- resonator cross coupling. Second we present experiments on individual lens-antenna coupled detectors at 1.5 THz that are made out of aluminium. With these devices we have observed, as a function of the irradiated power at 1.5 THz, the crossover from photon noise limited performance to detector-limited performance at loading powers less than 0.1 fW. In the latter limit the device is limited by intrinsic fluctuations in the Cooper pair and quasiparticle number, i.e. Generation-Recombination noise. This results in a sensitivity corresponding to a NEP = 3.8·10 -19 W/√(Hz).
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Fedorov, G., Kardakova, A., Gayduchenko, I., Voronov, B. M., Finkel, M., Klapwijk, T. M., et al. (2014). Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation. In Proc. 25th Int. Symp. Space Terahertz Technol. (71).
Abstract: This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented.
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