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Author Komrakova, S.; Kovalyuk, V.; An, P.; Golikov, A.; Rybin, M.; Obraztsova, E.; Goltsman, G.
Title Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012135
Keywords silicon nitride O-ring resonator, ORR
Abstract In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1177
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Author Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S.
Title Studying key principles for design and fabrication of silicon photonic-based beamforming networks Type Conference Article
Year 2019 Publication PIERS-Spring Abbreviated Journal PIERS-Spring
Volume Issue Pages 745-751
Keywords silicon photonics, TriPleX platform
Abstract In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number 9017646 Serial 1186
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Author Проходцов, А. И.; Голиков, А. Д.; Ан, П. П.; Ковалюк, В. В.; Гольцман, Г. Н.
Title Влияние покрытия из оксида кремния на эффективность фокусирующего решеточного элемента связи из нитрида кремния Type Conference Article
Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO
Volume Issue Pages 201-203
Keywords integrated optics, silicon nitride, focusing grating coupler
Abstract В работе экспериментально изучена зависимость эффективности фокусирующего решеточного элемента связи от периода и фактора заполнения до и после напыления верхнего слоя из оксида кремния. Полученные данные имеют практическое значение при создании перестраиваемых интегрально-оптических устройств на нитриде кремния.
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Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference (up)
Notes Duplicated as 1188 Approved no
Call Number Serial 1282
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Author Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
Title Development of a silicon membrane-based multipixel hot electron bolometer receiver Type Journal Article
Year 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 27 Issue 4 Pages 1-5
Keywords Multi-pixel, NbN HEB, silicon-on-insulator, horn array
Abstract We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1324
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Author Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M.
Title Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon Type Journal Article
Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.
Volume 73 Issue 1 Pages 44-47
Keywords uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field
Abstract The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-3640 ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1752
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