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Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. |
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Title |
Gain and noise bandwidth of NbN hot-electron bolometric mixers |
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Journal Article |
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1997 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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70 |
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24 |
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3296-3298 |
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NbN HEB mixers, conversion loss, conversion gain, U-factor technique |
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Abstract |
We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K. |
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279 |
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Kerr, A. R.; Feldman, M. J.; Pan, S.-K. |
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Title |
Receiver noise temperature, the quantum noise limit, and zero–point fluctuations |
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1997 |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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101-111 |
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277 |
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de Lange, G.; Hu, Q.; Huang, H.; Lichtenberger, A. W. |
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Title |
Development of a 170-210 GHz 3×3 micromachined SIS imaging array |
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Conference Article |
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1997 |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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518 |
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278 |
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Boreman, Glenn D. |
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Infrared microantennas |
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1997 |
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SPIE |
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SPIE |
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3110 |
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882-885 |
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optical antennas |
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We present results of mesurments of the polarization response of asymetric spiral antennas coupled Ni-NiO-Ni diodes, over the wavelength range 10.2 to 10.7 μm. The feed structure of the antenna imposes an elliptical polarization singature that is different from the circular polarization expected from a symmetric spiral. We develop a lossy-transmission-line model yielding the measured polarization response. A combination of a balanced and an unbalanced mode is required. Reflected current waves from the arm ends are significant. |
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RPLAB @ gujma @ |
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755 |
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ГОСТ Р 50995.0.1-96. Технологическое обеспечение создания продукции. Основные положения |
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1997 |
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gost, detproj |
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873 |
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