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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
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Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
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6 |
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241 |
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Ge, gamma irradiation, defects, impurities |
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1742 |
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Gol’tsman, G.N. |
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Overview of recent results for superconducting NbN terahertz and optical detectors and mixers |
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2014 |
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SM2 – Seminar on Terahertz Photonics |
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0562 |
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NbN SSPD, SNSPD, HEB |
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We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. |
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1746 |
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Pentin, Ivan; Finkel, Matvey; Maslennikov, Sergey; Vakhtomin, Yuri; Smirnov, Konstantin; Kaurova, Nataliya; Goltsman, Gregory |
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Superconducting hot-electron-bolometer mixers for the mid-IR |
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2017 |
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Rus. J. Radio Electron. |
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Rus. J. Radio Electron. |
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IR NbN HEB mixers |
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The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer. |
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Russian |
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1684-1719 |
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http://jre.cplire.ru/jre/oct17/9/abstract.html (Russian) Гетеродинный приемник со сверхпроводниковым смесителем на эффекте электронного разогрева для среднего инфракрасного диапазона |
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Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, Roman; Korneev, A.; Kouminov, P.; Okunev, O.; Chulkova, G.; Gol'tsman, G. |
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Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range |
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Miscellaneous |
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2004 |
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ResearchGate |
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ResearchGate |
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NbN SSPD, SNSPD |
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We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices. |
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Not attributed to any publisher! File name: PR9VervekinSfin_f.doc; Author: JAOLEARY; Last modification date: 2004-02-26 |
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1751 |
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Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
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Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
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Journal Article |
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2001 |
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Jetp Lett. |
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Jetp Lett. |
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73 |
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1 |
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44-47 |
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uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
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The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
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0021-3640 |
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