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Author |
Gol’tsman, G. N.; Smirnov, K. V. |
Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
Type |
Journal Article |
Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
Volume |
74 |
Issue |
9 |
Pages |
474-479 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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1541 |
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Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R. |
Title |
Picosecond superconducting single-photon optical detector |
Type |
Journal Article |
Year |
2001 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
79 |
Issue |
6 |
Pages |
705-707 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts. |
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0003-6951 |
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1543 |
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Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
Title |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
Type |
Journal Article |
Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
Volume |
9 |
Issue |
4 |
Pages |
242-245 |
Keywords |
NbN HEB mixers |
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1069-1227 |
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1550 |
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Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
Type |
Journal Article |
Year |
2000 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
71 |
Issue |
1 |
Pages |
31-34 |
Keywords |
2DEG, GaAs/AlGaAs heterostructures |
Abstract |
The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
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0021-3640 |
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http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
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1559 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Title |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
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Journal Article |
Year |
1999 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
Volume |
33 |
Issue |
5 |
Pages |
551-554 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
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1063-7826 |
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no |
Call Number |
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Serial |
1571 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Title |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
Type |
Conference Article |
Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Pages |
55-58 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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1602 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
Title |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
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Conference Article |
Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Pages |
163-166 |
Keywords |
S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN |
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1603 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Title |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
Type |
Journal Article |
Year |
1996 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
64 |
Issue |
5 |
Pages |
404-409 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
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0021-3640 |
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http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
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1608 |
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Author |
Smirnov, K.; Moshkova, M.; Antipov, A.; Morozov, P.; Vakhtomin, Y. |
Title |
The cascade switching of the photon number resolving superconducting single-photon detectors |
Type |
Journal Article |
Year |
2021 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
31 |
Issue |
2 |
Pages |
1-4 |
Keywords |
PNR SSPD, SNSPD |
Abstract |
In this article, present the first detailed study of cascade switching in superconducting photon number resolving detectors. The detectors were made in the form of four parallel nanowires, coupled with the single-mode optical fiber and mounted into a closed-cycle refrigerator with a temperature of 2.1 K. We found out the value of additional false pulses (N cas.sw. ) appearing due to cascade switching and showed that it is possible to set up the detector bias current that corresponds to a high level of the detection efficiency and a low level of N cas.sw. simultaneously. We reached the detection efficiency of 60% and N cas.sw. = 0.3%. |
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1051-8223 |
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no |
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1796 |
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Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. |
Title |
Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation |
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Journal Article |
Year |
2020 |
Publication |
Sci. Rep. |
Abbreviated Journal |
Sci. Rep. |
Volume |
10 |
Issue |
1 |
Pages |
16819 |
Keywords |
VN HEB |
Abstract |
The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively. |
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National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia |
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2045-2322 |
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PMID:33033360; PMCID:PMC7546726 |
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1797 |
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