Meledin, D., Tong, C. - Y. E., Blundell, R., & Goltsman, G. (2003). Measurement of intermediate frequency bandwidth of hot electron bolometer mixers at terahertz frequency range. IEEE Microw. Wireless Compon. Lett., 13(11), 493–495.
Abstract: We have developed a new experimental setup for measuring the IF bandwidth of superconducting hot electron bolometer mixers. In our measurement system we use a chopped hot filament as a broadband signal source, and can perform a high-speed IF scan with no loss of accuracy when compared to coherent methods. Using this technique we have measured the 3 dB IF bandwidth of hot electron bolometer mixers, designed for THz frequency operation, and made from 3-4 nm thick NbN film deposited on an MgO buffer layer over crystalline quartz.
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Vakhtomin, Y. B., Finkel, M. I., Antipov, S. V., Smirnov, K. V., Kaurova, N. S., Drakinskii, V. N., et al. (2003). The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J. of communications technol. & electronics, 48(6), 671–675.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Semenov, A. D., Hübers, H. - W., Richter, H., Birk, M., Krocka, M., Mair, U., et al. (2002). 2.5 THz heterodyne receiver with NbN hot-electron-bolometer mixer. Phys. C: Supercond., 372-376, 448–453.
Abstract: We describe a 2.5 THz heterodyne receiver for applications in astronomy and atmospheric research. The receiver employs a superconducting NbN phonon-cooled hot-electron-bolometer mixer and an optically pumped far-infrared gas laser as local oscillator. 2200 K double sideband mixer noise temperature was measured at 2.5 THz across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. The total conversion losses were 17 dB. The mixer response was linear at load temperatures smaller than 400 K. The receiver was tested in the laboratory environment by measuring the methanol line in emission. Observed pressure broadening confirms the true heterodyne detection regime of the mixer.
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Cherednichenko, S., Kroug, M., Merkel, H., Khosropanah, P., Adam, A., Kollberg, E., et al. (2002). 1.6 THz heterodyne receiver for the far infrared space telescope. Phys. C: Supercond., 372-376, 427–431.
Abstract: A low noise heterodyne receiver is being developed for the terahertz range using a phonon-cooled hot-electron bolometric mixer based on 3.5 nm thick superconducting NbN film. In the 1–2 GHz intermediate frequency band the double-sideband receiver noise temperature was 450 K at 0.6 THz, 700 K at 1.6 THz and 1100 K at 2.5 THz. In the 3–8 GHz IF band the lowest receiver noise temperature was 700 K at 0.6 THz, 1500 K at 1.6 THz and 3000 K at 2.5 THz while it increased by a factor of 3 towards 8 GHz.
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Loudkov, D., Khosropanah, P., Cherednichenko, S., Adam, A., MerkeI, H., Kollberg, E., et al. (2002). Broadband fourier transform spectrometer (FTS) measurements of spiral and double-slot planar antennas at THz frequencies. In Proc. 13th Int. Symp. Space Terahertz Technol. (pp. 373–369).
Abstract: The direct responses of NbN phonon-cooled hot electron bolometer (HEB) mixers, integrated with different planar antennas, are measured, using Fourier Transform Spectrometer (F1S). One spiral antenna and several double slot antennas, designed for 0.6, 1.4, 1.6, 1.8 and 2.5 THz central frequencies, are investigated. The Optimization of the measurement set-up is discussed in terms of the beam splitter and the F11S-to-HEB coupling. The result shows that the spiral antenna is circular polarized and has a bandwidth of about 2 THz. The frequency bands of double slot antennas show some shift from the design values and their relative bandwidth increases by increasing the design frequency. The antenna responses do not depend on the HEB bias point and temperature, as long as the device is in the resistive state.
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