Records |
Author |
Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. |
Title |
Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films |
Type |
Conference Article |
Year |
1996 |
Publication |
Czech J. Phys. |
Abbreviated Journal |
Czech J. Phys. |
Volume |
46 |
Issue |
S5 |
Pages |
2489-2490 |
Keywords |
Al, Be, Nb films |
Abstract |
The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K). |
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0011-4626 |
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1767 |
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Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
Type |
Journal Article |
Year |
1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
40 |
Issue |
2 |
Pages |
311-315 |
Keywords |
Ge, cyclotron resonance |
Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Author |
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
Type |
Journal Article |
Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume |
10 |
Issue |
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Pages |
1379-1383 |
Keywords |
Ge, cyclotron resonance, charged impurities, |
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1772 |
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Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
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Journal Article |
Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
22 |
Issue |
4 |
Pages |
95-97 |
Keywords |
Ge, impurities, excited states, absorption spectra |
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1773 |
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Author |
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
Type |
Journal Article |
Year |
1972 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume |
6 |
Issue |
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Pages |
362-363 |
Keywords |
Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E. |
Title |
Amplification of a Raman scattering signal by carbon nanotubes |
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Journal Article |
Year |
2018 |
Publication |
Dokl. Phys. |
Abbreviated Journal |
Dokl. Phys. |
Volume |
63 |
Issue |
12 |
Pages |
496-498 |
Keywords |
carbon nanotubes, CNT, Raman scattering, RLS |
Abstract |
The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes. |
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1028-3358 |
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1775 |
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Author |
Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. |
Title |
Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors |
Type |
Journal Article |
Year |
2015 |
Publication |
Carbon |
Abbreviated Journal |
Carbon |
Volume |
87 |
Issue |
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Pages |
330-337 |
Keywords |
carbon nanotubes, CNT detectors, field effect transistors, FET |
Abstract |
Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics. |
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0008-6223 |
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1778 |
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Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P. |
Title |
THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites |
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Journal Article |
Year |
2020 |
Publication |
Polymers (Basel) |
Abbreviated Journal |
Polymers (Basel) |
Volume |
12 |
Issue |
12 |
Pages |
3037 (1 to 14) |
Keywords |
THz spectroscopy; nanocomposites, percolation threshold, time-domain spectroscopy, time-domain spectrometer, TDS |
Abstract |
Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed. |
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Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland |
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English |
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2073-4360 |
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PMID:33353036; PMCID:PMC7767186 |
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1780 |
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Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
Title |
Helicity-sensitive plasmonic terahertz interferometer |
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Journal Article |
Year |
2020 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
Volume |
20 |
Issue |
10 |
Pages |
7296-7303 |
Keywords |
graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
Abstract |
Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
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CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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1530-6984 |
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PMID:32903004 |
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1781 |
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Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. |
Title |
Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes |
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Journal Article |
Year |
2015 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
Volume |
15 |
Issue |
12 |
Pages |
7859-7866 |
Keywords |
carbon nanotubes, CNT, tunable superconductivity, van Hove singularities |
Abstract |
Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube. |
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Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States |
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PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 |
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1782 |
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