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Author Финкель, М. И.; Масленников, С. Н.; Гольцман, Г. Н. openurl 
  Title Концепция приёмного комплекса космического радиотелескопа «Миллиметрон» Type Journal Article
  Year 2007 Publication Известия высших учебных заведений. Радиофизика Abbreviated Journal  
  Volume 50 Issue 10-11 Pages 924-934  
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  Notes Approved no  
  Call Number RPLAB @ s @ mix_review_2007_rus Serial 410  
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Author Loudkov, D.; Tong, C. Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G. openurl 
  Title An investigation of the performance of the superconducting HEB슠mixer as a function of its RF슠embedding impedance Type Journal Article
  Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 15 Issue 2 Pages 472-475  
  Keywords HEB mixer  
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  Corporate Author Thesis  
  Publisher IEEE Place of Publication Editor  
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  Notes Approved no  
  Call Number Serial 371  
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Author Финкель, М. И.; Масленников, С. Н.; Гольцман, Г. Н. openurl 
  Title Супергетеродинные терагерцовые приёмники со сверхпроводниковым смесителем на электронном разогреве Type Journal Article
  Year 2005 Publication Известия высших учебных заведений. Радиофизика Abbreviated Journal  
  Volume 48 Issue 10 Pages 964-970  
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  Notes Duplicated as 381 Approved no  
  Call Number Serial 380  
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Author Sobolewski, Roman; Xu, Ying; Zheng, Xuemei; Williams, Carlo; Zhang, Jin; Verevkin, Aleksandr; Chulkova, Galina; Korneev, Alexander; Lipatov, Andrey; Okunev, Oleg; Smirnov, Konstantin; Gol'tsman, Gregory N. url  openurl
  Title Spectral sensitivity of the NbN single-photon superconducting detector Type Journal Article
  Year 2002 Publication IEICE Trans. Electron. Abbreviated Journal IEICE Trans. Electron.  
  Volume E85-C Issue 3 Pages 797-802  
  Keywords NbN SSPD, SNSPD  
  Abstract We report our studies on the spectral sensitivity of superconducting NbN thin-film single-photon detectors (SPD's) capable of GHz counting rates of visible and near-infrared photons. In particular, it has been shown that a NbN SPD is sensitive to 1.55-µm wavelength radiation and can be used for quantum communication. Our SPD's exhibit experimentally measured intrinsic quantum efficiencies from 20% at 800 nm up to 1% at 1.55-µm wavelength. The devices demonstrate picosecond response time (<100 ps, limited by our readout system) and negligibly low dark counts. Spectral dependencies of photon counting of continuous-wave, 0.4-µm to 3.5-µm radiation, and 0.63-µm, 1.33-µm, and 1.55-µm laser-pulsed radiations are presented for the single-stripe-type and meander-type devices.  
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  Notes Approved no  
  Call Number Serial 1531  
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Author Корнеев, А. А.; Минаева, О.; Рубцова, И.; Милостная, И.; Чулкова, Г.; Воронов, Б.; Смирнов, К.; Селезнёв, В.; Гольцман, Г.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Верёвкин, А.; Sobolewski, R. url  openurl
  Title Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN Type Journal Article
  Year 2005 Publication Квантовая электроника Abbreviated Journal  
  Volume 35 Issue 8 Pages 698-700  
  Keywords NbN SSPD, SNSPD  
  Abstract Представлены результаты исследований сверхпроводящих однофотонных детекторов, изготовленных из ультратонкой пленки NbN. Развитие технологического процесса изготовления детекторов, а также снижение рабочей температуры до 2 К позволили существенно увеличить квантовую эффективность: для видимого света (λ = 0.56 мкм) она составила 30%–40%, т.е. достигла предела, определяемого коэффициентом поглощения пленки. С ростом длины волны квантовая эффективность экспоненциально падает, составляя ~20% на λ=1.55 мкм и ~0.02% на λ = 5 мкм. При скорости темнового счета ~10-4s-1 экспериментально измеренная эквивалентная мощность шума составила 1.5 × 10-20 Вт/Гц-1/2; в дальнейшем она может быть уменьшена до рекордно низкого значения 5 × 10-21 Вт/Гц-1/2. Временное разрешение детектора равно 30 пс.  
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  Language Russian Summary Language Original Title  
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  Notes Duplicated as 383 (Superconducting single-photon ultrathin NbN film detector) Approved no  
  Call Number Serial 382  
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Author Гершензон, Е. М.; Гершензон, М. Е.; Гольцман, Г. Н.; Семенов, А. Д.; Сергеев, А. В. url  openurl
  Title Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии Type Journal Article
  Year 1982 Publication Письма в ЖЭТФ Abbreviated Journal Письма в ЖЭТФ  
  Volume 36 Issue 7 Pages 241-244  
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  Notes Duplicated as 1717 Approved no  
  Call Number MSPU @ s @ Serial 225  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. url  openurl
  Title Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state Type Journal Article
  Year 1988 Publication Sov. J. Low Temp. Phys. Abbreviated Journal Sov. J. Low Temp. Phys.  
  Volume 14 Issue 7 Pages 414-420  
  Keywords HEB  
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  Notes Duplicated as 1697 Approved no  
  Call Number Serial 236  
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Author Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Limiting characteristic of fast superconducting bolometers Type Journal Article
  Year 1989 Publication Sov. Phys.-Tech. Phys. Abbreviated Journal Sov. Phys.-Tech. Phys.  
  Volume 34 Issue Pages 195-199  
  Keywords HEB  
  Abstract Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.  
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  Notes О предельных характеристиках быстродействующих серхпроводниковых болометров Approved no  
  Call Number Serial 237  
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Author Гершензон, Е. М.; Гершензон, М. Е.; Гольцман, Г. Н.; Люлькин, А. М.; Семенов, А. Д.; Сергеев, А. В. url  openurl
  Title О предельных характеристиках быстродействующих серхпроводниковых болометров Type Journal Article
  Year 1989 Publication Журнал технической физики Abbreviated Journal Журнал технической физики  
  Volume 59 Issue 2 Pages 111-120  
  Keywords HEB  
  Abstract Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.  
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  Language Russian Summary Language Original Title  
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  Notes Duplicated as 237 Approved no  
  Call Number Serial 238  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. url  openurl
  Title Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state Type Journal Article
  Year 1990 Publication Sov. Supercond. Abbreviated Journal Sov. Supercond.  
  Volume 3 Issue 10 Pages 1582-1597  
  Keywords HEB mixers  
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  Notes Approved no  
  Call Number Serial 240  
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Author Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Electron-phonon interaction in ultrathin Nb films Type Journal Article
  Year 1990 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 70 Issue 3 Pages 505-511  
  Keywords Nb films  
  Abstract A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.

1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.		  
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  Call Number Serial 241  
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Author Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. openurl 
  Title Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures Type Journal Article
  Year 2001 Publication Appl. Phys. Lett. Abbreviated Journal  
  Volume 79 Issue Pages 2049-2051  
  Keywords HEB detector, FIR, far infrared  
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  Call Number RPLAB @ s @ heb_eph_interaction_Gershenzon Serial 315  
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Author Ferrari, S.; Kovalyuk, V.; Hartmann, W.; Vetter, A.; Kahl, O.; Lee, C.; Korneev, A.; Rockstuhl, C.; Gol'tsman, G.; Pernice, W. openurl 
  Title Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors Type Journal Article
  Year 2017 Publication Opt. Express Abbreviated Journal Opt. Express  
  Volume 25 Issue 8 Pages 8739-8750  
  Keywords SSPD, SNSPD, photon counting; Infrared; Quantum detectors; Integrated optics; Multiphoton processes; Photon statistics  
  Abstract We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions.  
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  Call Number RPLAB @ kovalyuk @ Serial 1118  
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Author Гольцман, Г.Н.; Лудков, Д.Н. openurl 
  Title Сверхпроводниковые смесители на горячих электронах терагерцового диапазона и их применение в радиоастрономии Type Journal Article
  Year 2003 Publication Изв. высших учебных заведений. Радиофизика Abbreviated Journal  
  Volume 46 Issue 8/9 Pages  
  Keywords HEB, mixers  
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  Language russian Summary Language Original Title  
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  Notes Approved no  
  Call Number RPLAB @ s @ Serial 473  
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Author Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. url  openurl
  Title Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов Type Journal Article
  Year 2010 Publication Физика и техника полупроводников Abbreviated Journal  
  Volume 44 Issue 11 Pages 1475-1478  
  Keywords 2DEG, AlGaAs/GaAs heterostructures mixers  
  Abstract Методом субмиллиметровой спектроскопии с высоким временным разрешением измерены температурная и концентрационная зависимости полосы преобразования смесителей терагерцового диапазона AlGaAs/GaAs на разогреве двумерных электронов с фононным каналом их охлаждения. Полоса преобразования на уровне 3 дБ (f3 dB) при 4.2 K при изменении концентрации ns варьируется в пределах 150-250 МГц в соответствии со степенным законом f3 dB propto ns-0.5, что соответствует доминирующему механизму рассеяния на пьезоэлектрических фононах. Минимальное значение коэффициента потерь преобразования полупроводникового смесителя достигается в структурах с высокой подвижностью носителей mu>3·105 см2/В·с при 4.2 K.  
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  Notes Duplicated as 1216 Approved no  
  Call Number RPLAB @ gujma @ Serial 702  
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