Records |
Author |
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. |
Title |
Electron-phonon interaction in ultrathin Nb films |
Type |
Journal Article |
Year |
1990 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
70 |
Issue |
3 |
Pages |
505-511 |
Keywords |
Nb films |
Abstract |
A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.
1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
241 |
Permanent link to this record |
|
|
|
Author |
Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. |
Title |
Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures |
Type |
Journal Article |
Year |
2001 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
|
Volume |
79 |
Issue |
|
Pages |
2049-2051 |
Keywords |
HEB detector, FIR, far infrared |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
RPLAB @ s @ heb_eph_interaction_Gershenzon |
Serial |
315 |
Permanent link to this record |
|
|
|
Author |
Ferrari, S.; Kovalyuk, V.; Hartmann, W.; Vetter, A.; Kahl, O.; Lee, C.; Korneev, A.; Rockstuhl, C.; Gol'tsman, G.; Pernice, W. |
Title |
Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors |
Type |
Journal Article |
Year |
2017 |
Publication |
Opt. Express |
Abbreviated Journal |
Opt. Express |
Volume |
25 |
Issue |
8 |
Pages |
8739-8750 |
Keywords |
SSPD, SNSPD, photon counting; Infrared; Quantum detectors; Integrated optics; Multiphoton processes; Photon statistics |
Abstract |
We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
RPLAB @ kovalyuk @ |
Serial |
1118 |
Permanent link to this record |
|
|
|
Author |
Гольцман, Г.Н.; Лудков, Д.Н. |
Title |
Сверхпроводниковые смесители на горячих электронах терагерцового диапазона и их применение в радиоастрономии |
Type |
Journal Article |
Year |
2003 |
Publication |
Изв. высших учебных заведений. Радиофизика |
Abbreviated Journal |
|
Volume |
46 |
Issue |
8/9 |
Pages |
|
Keywords |
HEB, mixers |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
russian |
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
RPLAB @ s @ |
Serial |
473 |
Permanent link to this record |
|
|
|
Author |
Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. |
Title |
Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
Type |
Journal Article |
Year |
2010 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
|
Volume |
44 |
Issue |
11 |
Pages |
1475-1478 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures mixers |
Abstract |
Методом субмиллиметровой спектроскопии с высоким временным разрешением измерены температурная и концентрационная зависимости полосы преобразования смесителей терагерцового диапазона AlGaAs/GaAs на разогреве двумерных электронов с фононным каналом их охлаждения. Полоса преобразования на уровне 3 дБ (f3 dB) при 4.2 K при изменении концентрации ns варьируется в пределах 150-250 МГц в соответствии со степенным законом f3 dB propto ns-0.5, что соответствует доминирующему механизму рассеяния на пьезоэлектрических фононах. Минимальное значение коэффициента потерь преобразования полупроводникового смесителя достигается в структурах с высокой подвижностью носителей mu>3·105 см2/В·с при 4.2 K. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
Duplicated as 1216 |
Approved |
no |
Call Number |
RPLAB @ gujma @ |
Serial |
702 |
Permanent link to this record |