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Author Title Year Publication DOI (up)
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts 2018 Materials Today: Proc. 10.1016/j.matpr.2018.08.155
Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. Tunnel field-effect transistors for sensitive terahertz detection 2021 Nat. Commun. 10.1038/s41467-020-20721-z
Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. Response of graphene based gated nanodevices exposed to THz radiation 2015 EPJ Web of Conferences 10.1051/epjconf/201510310003
Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. Response of carbon nanotube film transistor to the THz radiation 2018 EPJ Web Conf. 10.1051/epjconf/201819505012
Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors 2018 Appl. Phys. Lett. 10.1063/1.5018151
Ozhegov, R. V.; Gorshkov, K. N.; Gol'tsman, G. N.; Kinev, N. V.; Koshelets, V. P. The stability of a terahertz receiver based on a superconducting integrated receiver 2011 Supercond. Sci. Technol. 10.1088/0953-2048/24/3/035003
Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. Towards to the development of THz detectors based on carbon nanostructures 2018 J. Phys.: Conf. Ser. 10.1088/1742-6596/1092/1/012039
Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes 2018 J. Phys.: Conf. Ser. 10.1088/1742-6596/1124/5/051050
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. Graphene-layer and graphene-nanoribbon FETs as THz detectors 2018 J. Phys.: Conf. Ser. 10.1088/1742-6596/1124/5/051054
Baksheeva, K.; Vdovydchenko, A.; Gorshkov, K.; Ozhegov, R.; Kinev, N.; Koshelets, V.; Goltsman, G. Study of human skin radiation in the terahertz frequency range 2019 J. Phys.: Conf. Ser. 10.1088/1742-6596/1410/1/012076
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate 1997 Phys. Rev. B 10.1103/PhysRevB.56.10089
Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. Electron heating in metallic resistors at sub-Kelvin temperature 2007 Phys. Rev. B 10.1103/PhysRevB.76.165426
Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. Relaxation of the resistive superconducting state in boron-doped diamond films 2016 Phys. Rev. B 10.1103/PhysRevB.93.064506
Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ 1999 IEEE Trans. Appl. Supercond. 10.1109/77.783713
Samsonova, Alena; Zolotov, Philipp; Baeva, Elmira; Lomakin, Andrey; Titova, Nadezhda; Kardakova, Anna; Goltsman, Gregory Signatures of surface magnetic disorder in thin niobium films 2021 IEEE Trans. Appl. Supercond. 10.1109/TASC.2021.3065281