Records |
Author |
Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. |
Title |
Time delay of resistive-state formation in superconducting stripes excited by single optical photons |
Type |
Journal Article |
Year |
2003 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume |
67 |
Issue |
13 |
Pages |
132508 (1 to 4) |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes. |
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0163-1829 |
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1519 |
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Author |
Gol'tsman, G. N.; Karasik, B. S.; Okunev, O. V.; Dzardanov, A. L.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E. |
Title |
NbN hot electron superconducting mixers for 100 GHz operation |
Type |
Journal Article |
Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
5 |
Issue |
2 |
Pages |
3065-3068 |
Keywords |
NbN HEB mixers |
Abstract |
NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K. |
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1051-8223 |
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About LO power required |
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no |
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Serial |
255 |
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Author |
Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
Type |
Journal Article |
Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
7 |
Issue |
2 |
Pages |
3548-3551 |
Keywords |
NbN HEB mixers |
Abstract |
A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
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1051-8223 |
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no |
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Serial |
1595 |
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Author |
Gol’tsman, G.; Okunev, O.; Chulkova, G.; Lipatov, A.; Dzardanov, A.; Smirnov, K.; Semenov, A.; Voronov, B.; Williams, C.; Sobolewski, R. |
Title |
Fabrication and properties of an ultrafast NbN hot-electron single-photon detector |
Type |
Journal Article |
Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
11 |
Issue |
1 |
Pages |
574-577 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB. |
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1558-2515 |
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no |
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1547 |
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Author |
Chulkova, G.; Milostnaya, I.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Voronov, B.; Okunev, O.; Smirnov, K.; Gol’tsman, G.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, R.; Slysz, W. |
Title |
Superconducting nanostructures for counting of single photons in the infrared range |
Type |
Conference Article |
Year |
2005 |
Publication |
Proc. 2-nd CAOL |
Abbreviated Journal |
Proc. 2-nd CAOL |
Volume |
2 |
Issue |
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Pages |
100-103 |
Keywords |
SSPD, SNSPD |
Abstract |
We present our studies on ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs are patterned by electron beam lithography from 4-nm thick NbN film into meander-shaped strips covering square area of 10/spl times/10 /spl mu/m/sup 2/. The advances in the fabrication technology allowed us to produce highly uniform 100-120-nm-wide strips with meander filling factor close to 0.6. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, an avalanche of excited hot electrons and the biasing supercurrent, jointly produce a picosecond voltage transient response across the superconducting nanostrip. The SSPDs are typically operated at 4.2 K, but they have shown that their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by optical absorption of our 4-nm-thick NbN film. For 1.55 /spl mu/m photons, QE was /spl sim/20% and decreases exponentially with the increase of the optical wavelength, but even at the wavelength of 6 /spl mu/m the detector remains sensitive to single photons and exhibits QE of about 10/sup -2/%. The dark (false) count rate at 2 K is as low as 2 /spl times/ 10/sup -4/ s/sup -1/, what makes our detector essentially a background-limited sensor. The very low dark-count rate results in the noise equivalent power (NEP) as low as 10/sup -18/ WHz/sup -1/2/ for the mid-infrared range (6 /spl mu/m). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for the other, lower-T/sub c/ superconductors with the narrow superconducting gap and low quasiparticle diffusivity. The use of such materials will shift the cutoff wavelength towards the values even longer than 6 /spl mu/m. |
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Second International Conference on Advanced Optoelectronics and Lasers |
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no |
Call Number |
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Serial |
1461 |
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Author |
Okunev, O.; Chulkova, G.; Milostnaya, I.; Antipov, A.; Smirnov, K.; Morozov, D.; Korneev, A.; Voronov, B.; Gol’tsman, G.; Stysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gorska, M.; Pearlman, A.; Cross, A.; Kitaygorsky, J.; Sobolewski, R. |
Title |
Registration of infrared single photons by a two-channel receiver based on fiber-coupled superconducting single-photon detectors |
Type |
Conference Article |
Year |
2005 |
Publication |
Proc. 2-nd CAOL |
Abbreviated Journal |
Proc. 2-nd CAOL |
Volume |
2 |
Issue |
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Pages |
282-285 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
Single-photon detectors (SPDs) are the foundation of all quantum communications (QC) protocols. Among different classes of SPDs currently studied, NbN superconducting SPDs (SSPDs) are established as the best devices for ultrafast counting of single photons in the infrared (IR) wavelength range. The SSPDs are nanostructured, 100 /spl mu/m/sup 2/ in total area, superconducting meanders, patterned by electron lithography in ultra-thin NbN films. Their operation has been explained within a phenomenological hot-electron photoresponse model. We present the design and performance of a novel, two-channel SPD receiver, based on two fiber-coupled NbN SSPDs. The receivers have been developed for fiber-based QC systems, operational at 1.3 /spl mu/m and 1.55 /spl mu/m telecommunication wavelengths. They operate in the temperature range from 4.2 K to 2 K, in which the NbN SSPDs exhibit their best performance. The receiver unit has been designed as a cryostat insert, placed inside a standard liquid-helium storage dewar. The input of the receiver consists of a pair of single-mode optical fibers, equipped with the standard FC connectors and kept at room temperature. Coupling between the SSPD and the fiber is achieved using a specially designed, precise micromechanical holder that places the fiber directly on top of the SSPD nanostructure. Our receivers achieve the quantum efficiency of up to 7% for near-IR photons, with the coupling efficiency of about 30%. The response time was measured to be <300 ps and it was limited by our read-out electronics. The jitter of fiber-coupled SSPDs is <35 ps and their dark-count rate is below 1 s/sup -1/. The presented performance parameters show that our single-photon receivers are fully applicable for quantum-correlation-type QC systems, including practical quantum cryptography. |
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Second International Conference on Advanced Optoelectronics and Lasers |
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no |
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1462 |
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Xu, Y.; Zheng, X.; Williams, C.; Verevkin, A.; Sobolewski, R.; Chulkova, G.; Lipatov, A.; Okunev, O.; Smirnov, K.; Gol’tsman, G. N. |
Title |
Ultrafast superconducting hot-electron single-photon detector |
Type |
Conference Article |
Year |
2001 |
Publication |
CLEO |
Abbreviated Journal |
CLEO |
Volume |
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Issue |
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Pages |
345 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
Summary form only given. The current most-pressing need is to develop a practical, GHz-range counting single-photon detector, operational at either 1.3-/spl mu/m or 1.55-/spl mu/m radiation wavelength, for novel quantum communication and quantum cryptography systems. The presented solution of the problem is to use an ultrafast hot-electron photodetector, based on superconducting thin-film microstructures. This type of device is very promising, due to the macroscopic quantum nature of superconductors. Very fast response time and the small, (meV range) value of the superconducting energy gap characterize the superconductor, leading to the efficient avalanche process even for infrared photons. |
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Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170) |
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1545 |
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Smirnov, K.; Korneev, A.; Minaeva, O.; Divochij, A.; Rubtsova, I.; Antipov, A.; Ryabchun, S.; Okunev, O.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Kaurova, N.; Seleznev, V.; Korotetskaya, Y.; Gol’tsman, G. |
Title |
Superconducting single-photon detector for near- and middle IR wavelength range |
Type |
Conference Article |
Year |
2006 |
Publication |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Volume |
2 |
Issue |
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Pages |
684-685 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
Presented in this paper are the results of research of NbN-film superconducting single-photon detector. At 2 K temperature, quantum efficiency in the visible light (0.56 mum) reaches 30-40 %. With the wavelength increase quantum efficiency decreases and comes to 20% at 1.55 mum and 0.02% at 5.6 mum. Minimum dark counts rate is 2times10-4s-1. The jitter of detector is 35 ps. The detector was successfully implemented for integrated circuits non-invasive optical testing. It is also perspective for quantum cryptography systems |
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Russian |
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1447 |
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Gol’tsman, G.; Korneev, A.; Tarkhov, M.; Seleznev, V.; Divochiy, A.; Minaeva, O.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K. |
Title |
Middle-infrared ultrafast superconducting single photon detector |
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Conference Article |
Year |
2007 |
Publication |
32nd IRMW / 15th ICTE |
Abbreviated Journal |
32nd IRMW / 15th ICTE |
Volume |
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Pages |
115-116 |
Keywords |
SSPD, SNSPD |
Abstract |
We present the results of the research on quantum efficiency of the ultrathin-film superconducting single-photon detectors (SSPD) in the wavelength rage from 1 mum to 5.7 mum. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of ~1 % at 5.7 mum wavelength with the SSPD made from 4-nm-thick NbN film. In a pursuit of further performance improvement we endeavored SSPD fabricating from 4-nm-thick MoRe film as an alternative material. The MoRe film exhibited transition temperature of 7.7K, critical current density at 4.2 K temperature was 1.1times10 6 A/cm 2 , and diffusivity 1.73 cmVs. The single-photon response was observed with MoRe SSPD at 1.3 mum wavelength with quantum efficiency estimated to be 0.04%. |
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1246 |
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Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Wilsher, K.; Lo, W.; Okunev, O.; Korneev, A.; Kouminov, P.; Chulkova, G.; Gol’tsman, G. N. |
Title |
A superconducting single-photon detector for CMOS IC probing |
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Conference Article |
Year |
2003 |
Publication |
Proc. 16-th LEOS |
Abbreviated Journal |
Proc. 16-th LEOS |
Volume |
2 |
Issue |
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Pages |
602-603 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA). |
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The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003. |
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1510 |
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