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| Author | Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. | ||||
| Title | Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers | Type | Journal Article | ||
| Year | 2001 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 79 | Issue | 15 | Pages | 2483-2485 |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 311 | |||
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| Author | Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers | Type | Journal Article | ||
| Year | 2004 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 84 | Issue | 11 | Pages | 1958-1960 |
| Keywords | NbN HEB mixers | ||||
| Abstract | We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz. |
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| Notes | Approved | no | |||
| Call Number | Serial | 352 | |||
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| Author | Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Vahtomin, Yu.; Maslennikov, S.; Antipov, S.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Direct detection effect in small volume hot electron bolometer mixers | Type | Journal Article | ||
| Year | 2005 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 86 | Issue | 16 | Pages | 163503 (1 to 3) |
| Keywords | HEB, mixer, direct detection effect | ||||
| Abstract | We measure the direct detection effect in a small volume (0.15μm×1μm×3.5nm)(0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electronbolometermixer at 1.6THz1.6THz. We find that the small signal sensitivity of the receiver is underestimated by 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300K300K and 77K77K. Using a 200GHz200GHzbandpass filter at 4.2K4.2K the direct detection effect virtually disappears. This has important implications for the calibration procedure of these receivers in real telescope systems. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 377 | |||
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| Author | Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. | ||||
| Title | Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers | Type | Journal Article | ||
| Year | 2006 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 100 | Issue | 8 | Pages | 084510 (1 to 7) |
| Keywords | NbN HEB mixers | ||||
| Abstract | We present a detailed experimental study of the direct detection effect in a small volume (0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electron bolometer mixer at 673GHz. We find that the small signal noise temperature, relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 and 77K calibration loads. In a separate set of experiments we show that the direct detection effect is caused by a combination of bias current reduction when switching from the 77 to the 300K load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. |
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| ISSN | 0021-8979 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1442 | |||
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| Author | Kooi, J. W.; Baselmans, J. J. A.; Baryshev, A.; Schieder, R.; Hajenius, M.; Gao, J.R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. | ||||
| Title | Stability of heterodyne terahertz receivers | Type | Journal Article | ||
| Year | 2006 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 100 | Issue | 6 | Pages | 064904 (1 to 9) |
| Keywords | NbN HEB mixers | ||||
| Abstract | In this paper we discuss the stability of heterodyne terahertz receivers based on small volume NbN phonon cooled hot electron bolometers (HEBs). The stability of these receivers can be broken down in two parts: the intrinsic stability of the HEB mixer and the stability of the local oscillator (LO) signal injection scheme. Measurements show that the HEB mixer stability is limited by gain fluctuations with a 1∕f spectral distribution. In a 60MHz noise bandwidth this results in an Allan variance stability time of ∼0.3s. Measurement of the spectroscopic Allan variance between two intermediate frequency (IF) channels results in a much longer Allan variance stability time, i.e., 3s between a 2.5 and a 4.7GHz channel, and even longer for more closely spaced channels. This implies that the HEB mixer 1∕f noise is strongly correlated across the IF band and that the correlation gets stronger the closer the IF channels are spaced. In the second part of the paper we discuss atmospheric and mechanical system stability requirements on the LO-mixer cavity path length. We calculate the mixer output noise fluctuations as a result of small perturbations of the LO-mixer standing wave, and find very stringent mechanical and atmospheric tolerance requirements for receivers operating at terahertz frequencies. | ||||
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| ISSN | 0021-8979 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1444 | |||
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| Author | Hajenius, M.; Baselmans, J. J. A.; Baryshev, A.; Gao, J. R.; Klapwijk, T. M.; Kooi, J. W.; Jellema, W.; Yang, Z. Q. | ||||
| Title | Full characterization and analysis of a terahertz heterodyne receiver based on a NbN hot electron bolometer | Type | Journal Article | ||
| Year | 2006 | Publication | J. Appl. Phys. | Abbreviated Journal | |
| Volume | 100 | Issue | 7 | Pages | 074507 |
| Keywords | HEB | ||||
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| ISSN | 0021-8979 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ s @ | Serial | 385 | ||
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| Author | Kooi, J. W.; Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Dieleman, P.; Baryshev, A.; de Lange, G. | ||||
| Title | IF impedance and mixer gain of NbN hot electron bolometers | Type | Journal Article | ||
| Year | 2007 | Publication | J. Appl. Phys. | Abbreviated Journal | |
| Volume | 101 | Issue | 4 | Pages | 044511 |
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| ISSN | 0021-8979 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ s @ | Serial | 445 | ||
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| Author | Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. | ||||
| Title | Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate | Type | Journal Article | ||
| Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 91 | Issue | 6 | Pages | 062504 (1 to 3) |
| Keywords | NbN films, nanofilms | ||||
| Abstract | The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM. The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1425 | |||
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| Author | Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M. | ||||
| Title | Low noise superconducting single photon detectors on silicon | Type | Journal Article | ||
| Year | 2008 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 93 | Issue | 13 | Pages | 131101 |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ s @ | Serial | 436 | ||
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| Author | Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. | ||||
| Title | Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers | Type | Journal Article | ||
| Year | 2016 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 109 | Issue | 13 | Pages | 132602 |
| Keywords | HEB mixer, contacts | ||||
| Abstract | We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1107 | |||
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| Author | Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz | Type | Journal Article | ||
| Year | 2004 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 17 | Issue | 5 | Pages | S224-S228 |
| Keywords | NbN HEB mixers | ||||
| Abstract | NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance. | ||||
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| ISSN | 0953-2048 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 558 | |||
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| Author | Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. | ||||
| Title | Thermal properties of NbN single-photon detectors | Type | Journal Article | ||
| Year | 2018 | Publication | Phys. Rev. Applied | Abbreviated Journal | Phys. Rev. Applied |
| Volume | 10 | Issue | 6 | Pages | 064063 (1 to 8) |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices. | ||||
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| ISSN | 2331-7019 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1226 | |||
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| Author | Romijn, J.; Klapwijk, T. M.; Renne, M. J.; Mooij, J. E. | ||||
| Title | Critical pair-breaking current in superconducting aluminum strips far below Tc | Type | Journal Article | ||
| Year | 1982 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
| Volume | 26 | Issue | 7 | Pages | 3648-3655 |
| Keywords | superconducting nanowire | ||||
| Abstract | Critical currents of narrow, thin aluminum strips have been measured as a function of temperature. For the smallest samples uniformity of the current density is obtained over a large temperature range. Hence the intrinsic limit on the currentcarrying capacity of the superconductor was measured outside the Ginzburg-Landau -regime. The experimental values are compared with recent theoretical predictions by Kupriyanov and Lukichev. An approximate method of solving their equations is given, the results of which agree with the exact solution to within 1%. Experimental data are in excellent agreement with theoretical predictions. The absolute values agree if one assumes a Ïl value of 4×10–16 Ωm2 with vF=1.3×106 m/s. This value for Ïl is the same as that found from measurements of the anomalous skin effect but differs from values extracted from size-effect-limited resistivity. | ||||
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| Notes | Recommended by Klapwijk | Approved | no | ||
| Call Number | Serial | 925 | |||
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| Author | Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. | ||||
| Title | Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy | Type | Journal Article | ||
| Year | 1994 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
| Volume | 49 | Issue | 15 | Pages | 10484-10494 |
| Keywords | Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy | ||||
| Abstract | Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data. | ||||
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| Publisher | American Physical Society | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1005 | |||
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| Author | Coumou, P. C. J. J.; Driessen, E. F. C.; Bueno, J.; Chapelier, C.; Klapwijk, T. M. | ||||
| Title | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films | Type | Journal Article | ||
| Year | 2013 | Publication | Phys. Rev. B | Abbreviated Journal | |
| Volume | 88 | Issue | 18 | Pages | 180505 (1 to 5) |
| Keywords | strongly disordered superconducting TiN films, microwave resonators | ||||
| Abstract | We have studied the electrodynamic response of strongly disordered superconducting TiN films using microwave resonators, where the disordered superconductor is the resonating element in a high-quality superconducting environment of NbTiN. We describe the response assuming an effective pair-breaking mechanism modifying the density of states and compare this to local tunneling spectra obtained using scanning tunneling spectroscopy. For the least disordered film (kFl=8.7, Rs=13Ω), we find good agreement, whereas for the most disordered film (kFl=0.82, Rs=4.3kΩ), there is a strong discrepancy, which signals the breakdown of a model based on uniform properties. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1069 | |||
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