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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. url  openurl
  Title Investigation of excited donor states in GaAs Type Journal Article
  Year 1974 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 7 Issue 10 Pages 1248-1250  
  Keywords GaAs, excited donor states  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor  
  Language Summary Language Original Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1733  
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Author Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. url  openurl
  Title Energy spectrum of free excitons in germanium Type Journal Article
  Year 1973 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 18 Issue 3 Pages 93  
  Keywords Ge, free excitons, energy spectrum  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1734  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Submillimeter spectroscopy of semiconductors Type Journal Article
  Year 1973 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 37 Issue 2 Pages 299-304  
  Keywords semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons  
  Abstract The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.  
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  Notes Approved no  
  Call Number Serial 1735  
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Author Goltsman, G. url  openurl
  Title Simple method for stabilizing power of submillimetric spectrometer Type Journal Article
  Year 1972 Publication Pribory i Tekhnika Eksperimenta Abbreviated Journal Pribory i Tekhnika Eksperimenta  
  Volume Issue 1 Pages 136  
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  Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia Place of Publication Editor  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1738  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. url  openurl
  Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 5 Pages 185-186  
  Keywords Ge, Si, neutral impurity atom, binding energy  
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  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1739  
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Author Gershenzon, E. M.; Gol'tsman, G. N. url  openurl
  Title Transitions of electrons between excited states of donors in germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 2 Pages 63-65  
  Keywords Ge, donors, excited states  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1740  
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Author Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. url  openurl
  Title Germanium hot-electron narrow-band detector Type Journal Article
  Year 1971 Publication Sov. Radio Engineering And Electronic Physics Abbreviated Journal Sov. Radio Engineering And Electronic Physics  
  Volume 16 Issue 8 Pages 1346  
  Keywords Ge HEB detectors  
  Abstract  
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  Publisher Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1741  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. url  openurl
  Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 6 Pages 241  
  Keywords Ge, gamma irradiation, defects, impurities  
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  Notes Approved no  
  Call Number Serial 1742  
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Author Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory url  openurl
  Title Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors Type Abstract
  Year 2020 Publication Graphene and 2dm Virt. Conf. Abbreviated Journal Graphene and 2DM Virt. Conf.  
  Volume Issue Pages  
  Keywords single layer graphene, SLG, CVD, plasmons, FET  
  Abstract Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464.  
  Address Grenoble, France  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference Graphene and 2dm Virtual Conference & Expo  
  Notes Approved no  
  Call Number Serial 1743  
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Author Goltsman, Gregory url  openurl
  Title Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors Type Conference Article
  Year 2017 Publication 16th ISEC Abbreviated Journal 16th ISEC  
  Volume Issue Pages Th-I-QTE-03 (1 to 3)  
  Keywords waveguide SSPD, SNSPD  
  Abstract We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device.  
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  Area Expedition Conference IEEE/CSC & ESAS Superconductivity News Forum  
  Notes Approved no  
  Call Number Serial 1745  
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