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Author Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. url  doi
openurl 
  Title Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform Type Conference Article
  Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 220 Issue Pages 03012  
  Keywords e-beam lithography, Si3N4  
  Abstract In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1189  
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Author Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. url  doi
openurl 
  Title Integration of nanodiamonds with NV-centers on optical silicon nitride structures Type Conference Article
  Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 220 Issue Pages 03013  
  Keywords nanodiamonds, NV-centers, Si3N4  
  Abstract In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1190  
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Author Semenov, A. D.; Gol’tsman, G. N.; Gogidze, I. G.; Sergeev, A. V.; Gershenzon, E. M.; Lang, P. T.; Renk, K. F. url  doi
openurl 
  Title Subnanosecond photoresponse of a YBaCuO thin film to infrared and visible radiation by quasiparticle induced suppression of superconductivity Type Journal Article
  Year 1992 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 60 Issue 7 Pages 903-905  
  Keywords YBCO HTS detectors  
  Abstract We observed subnanosecond photoresponse of a structured superconducting YBa2Cu3O7−δ thin film to infrared and visible radiation. We measured the voltage response of a current biased film (thickness 700 Å) in a resistive state to radiation pulses. From our results we conclude a response time of about 90 ps and a responsivity of about 4×1010 Ω/J. We attribute the response to Cooper pair breaking and suppression of the superconducting energy gap induced by nonequilibrium quasiparticles.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1672  
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Author Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. url  doi
openurl 
  Title Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films Type Journal Article
  Year 1993 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 63 Issue 5 Pages 681-683  
  Keywords YBCO HTS detectors, nonequilibrium  
  Abstract The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1655  
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Author Lindgren, M.; Trifonov, V.; Zorin, M.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E.M. url  doi
openurl 
  Title Transient resistive photoresponse of YBa2Cu3O7−δ films using low power 0.8 and 10.6 μm laser radiation Type Journal Article
  Year 1994 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 64 Issue 22 Pages 3036-3038  
  Keywords YBCO HTS HEB, nonequilibrium  
  Abstract Thin YBa2Cu3O7−δ laser deposited films were patterned into devices consisting of ten parallel 1 μm wide strips. Nonequilibrium picosecond and bolometric photoresponses were studied by the use of 17 ps full width at half‐maximum laser pulses and amplitude modulated radiation from an AlGaAs laser up to 10 GHz and from a CO2 laser up to 1 GHz. The time and frequency domain measurements were in agreement. The fast response can be explained by electron heating. The use of low optical power and a sensitive measurement system excluded any nonlinear transient processes and kinetic inductance changes in the superconducting state. At 1 GHz modulation frequency, the responsivity was ∼1.2 V/W both for 0.8 and 10.6 μm wavelengths. The sensitivity of a fast and spectrally broadband infrared detector is discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1639  
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