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Peltonen, J. T.; Astafiev, O. V.; Korneeva, Y. P.; Voronov, B. M.; Korneev, A. A.; Charaev, I. M.; Semenov, A. V.; Golt'sman, G. N.; Ioffe, L. B.; Klapwijk, T. M.; Tsai, J. S. |
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Title |
Coherent flux tunneling through NbN nanowires |
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Journal Article |
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Year |
2013 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
88 |
Issue |
22 |
Pages |
220506 (1 to 5) |
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Keywords |
NbN nanowires |
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Abstract |
We demonstrate evidence of coherent magnetic flux tunneling through superconducting nanowires patterned in a thin highly disordered NbN film. The phenomenon is revealed as a superposition of flux states in a fully metallic superconducting loop with the nanowire acting as an effective tunnel barrier for the magnetic flux, and reproducibly observed in different wires. The flux superposition achieved in the fully metallic NbN rings proves the universality of the phenomenon previously reported for InOx. We perform microwave spectroscopy and study the tunneling amplitude as a function of the wire width, compare the experimental results with theories, and estimate the parameters for existing theoretical models. |
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1098-0121 |
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1369 |
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Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
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Title |
Relaxation of the resistive superconducting state in boron-doped diamond films |
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Journal Article |
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Year |
2016 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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93 |
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6 |
Pages |
064506 |
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boron-doped diamond films, resistive superconducting state, relaxation time |
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We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
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2469-9950 |
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1167 |
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Finkel, M.; Thierschmann, H. R.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. |
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Title |
Branchline and directional THz coupler based on PECVD SiNx-technology |
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Conference Article |
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2016 |
Publication |
41st IRMMW-THz |
Abbreviated Journal |
41st IRMMW-THz |
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microstrip, fixtures, coplanar waveguides, couplers, standards, probes, dielectrics |
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A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope. |
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2162-2035 |
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978-1-4673-8485-8 |
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7758586 |
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1295 |
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Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Baryshev, A.; Kooi, J.; Klapwijk, T. M.; Voronov, B.; de Korte, P.; Gol'tsman, G. |
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Title |
NbN hot electron bolometer mixers: sensitivity, LO power, direct detection and stability |
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Journal Article |
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Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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15 |
Issue |
2 |
Pages |
484-489 |
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HEB mixers, direct detection effect, stability, Allan variance |
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We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. Both the receiver noise temperature and the gain bandwidth can be improved by a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature of 950 K at 2.5 THz and 4.3 K, using a 0.4/spl times/4 /spl mu/m HEB mixer with a spiral antenna. At the same bias point, we obtain an IF gain bandwidth of 6 GHz. To comply with current demands on THz mixers for use in space based receivers we reduce the device size to 0.15/spl times/1 /spl mu/m and use a twin slot antenna. We report measurements of the noise temperature, LO power requirement, stability and the direct detection effect, using a mixer with a 1.6 THz twin slot antenna and a 1.462 THz solid state LO source with calibrated output power. |
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1051-8223 |
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546 |
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Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G. |
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Local resistivity and the current-voltage characteristics of hot electron bolometer mixers |
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Journal Article |
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2005 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
15 |
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2 |
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495-498 |
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HEB mixer distributed model, HEB distributed model, distributed HEB model |
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Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling. |
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1051-8223 |
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980 |
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