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Zhang, J., Verevkin, A., Slysz, W., Chulkova, G., Korneev, A., Lipatov, A., et al. (2017). Time-resolved characterization of NbN superconducting single-photon optical detectors. In J. C. Armitage (Ed.), Proc. SPIE (Vol. 10313, 103130F (1 to 3)). SPIE.
Abstract: NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest.
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Zhang, J., Slysz, W., Verevkin, A., Okunev, O., Chulkova, G., Korneev, A., et al. (2003). Response time characterization of NbN superconducting single-photon detectors. IEEE Trans. Appl. Supercond., 13(2), 180–183.
Abstract: We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps.
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Maslennikov, S. N., Morozov, D. V., Ozhegov, R. V., Smirnov, K. V., Okunev, O. V., & Gol’tsman, G. N. (2004). Imaging system for submillimeter wave range based on AlGaAs/GaAs hot electron bolometer mixers. In Proc. 5-th MSMW (Vol. 2, pp. 558–560).
Abstract: Electromagnetic radiation of the submillimeter (SMM) range is dispersed and absorbed significantly less than infrared (IR) radiation when passing through different objects. That is the reason for the development of an SMM imaging system. In this paper, we discuss the design of an SMM heterodyne imager, based on a matrix of AlGaAs/GaAs heterostructure hot electron bolometer mixers (HEB) with relatively high (about 77 K) operating temperature. The predicted double side band (DSB) noise temperature is about 1000 K and optimal local oscillator (LO) power is about 1 /spl mu/W for such mixers, which seems to be quite prospective for an SMM heterodyne imager.
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Zhang, J., Pearlman, A., Slysz, W., Verevkin, A., Sobolewski, R., Wilsher, K., et al. (2003). A superconducting single-photon detector for CMOS IC probing. In Proc. 16-th LEOS (Vol. 2, pp. 602–603).
Abstract: In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA).
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Gol’tsman, G., Korneev, A., Tarkhov, M., Seleznev, V., Divochiy, A., Minaeva, O., et al. (2007). Middle-infrared ultrafast superconducting single photon detector. In 32nd IRMW / 15th ICTE (pp. 115–116).
Abstract: We present the results of the research on quantum efficiency of the ultrathin-film superconducting single-photon detectors (SSPD) in the wavelength rage from 1 mum to 5.7 mum. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of ~1 % at 5.7 mum wavelength with the SSPD made from 4-nm-thick NbN film. In a pursuit of further performance improvement we endeavored SSPD fabricating from 4-nm-thick MoRe film as an alternative material. The MoRe film exhibited transition temperature of 7.7K, critical current density at 4.2 K temperature was 1.1times10 6 A/cm 2 , and diffusivity 1.73 cmVs. The single-photon response was observed with MoRe SSPD at 1.3 mum wavelength with quantum efficiency estimated to be 0.04%.
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