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Elezov, M. S.; Scherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. |
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Active and passive phase stabilization for the all-fiber Michelson interferometer |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1124 |
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051014 (1 to 5) |
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Michelson interferometer, phase stabilization |
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We put forward two methods for phase stabilization in the all-fiber Michelson interferometer. To perform passive phase stabilization, we use a heat bath for all fibers and electro-optical components, and put the interferometer in a hermetic case. To perform active phase stabilization, we monitor output power of the interferometer and develop an electronic feedback control. The phase stabilization methods enable stable interference pattern for several minutes, and can be helpful for the development of the optimal quantum receiver for coherent signals. |
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1742-6588 |
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1299 |
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Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
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Towards to the development of THz detectors based on carbon nanostructures |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1092 |
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012039 (1 to 4) |
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CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors |
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Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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1742-6588 |
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1302 |
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Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. |
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Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity |
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Journal Article |
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2014 |
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Laser Phys. Lett. |
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11 |
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1 |
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015004 (1 to 4) |
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HEB applications, HEB detector applications, short THz pulses detection |
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We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. |
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1076 |
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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
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Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
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2019 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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32 |
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7 |
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075003 |
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NbN HEB mixer, GaN buffer layer, sapphire substrate |
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We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
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1277 |
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Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. |
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Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices |
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Journal Article |
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2018 |
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Nanotechnol. |
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Nanotechnol. |
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29 |
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24 |
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245204 (1 to 8) |
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single layer graphene, graphene nanoribbons |
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We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity. |
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Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia |
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0957-4484 |
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PMID:29553479 |
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1308 |
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