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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
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Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
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Journal Article |
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Year |
1996 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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64 |
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5 |
Pages |
404-409 |
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Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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Abstract |
The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
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0021-3640 |
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http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
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1608 |
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Gol’tsman, G. N.; Smirnov, K. V. |
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Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
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Journal Article |
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2001 |
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Jetp Lett. |
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Jetp Lett. |
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74 |
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9 |
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474-479 |
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Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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1541 |
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Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride |
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Journal Article |
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1997 |
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Tech. Phys. Lett. |
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Tech. Phys. Lett. |
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23 |
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6 |
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486-488 |
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NbN KID |
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A new type of fast detector is proposed, whose operation is based on the variation of the kinetic inductance of a superconducting film caused by nonequilibrium quasiparticles created by the electromagnetic radiation. The speed of the detector is determined by the rate of multiplication of photo-excited quasiparticles, and is nearly independent of the temperature, being less than 1 ps for NbN. Models based on the Owen-Scalapino scheme give a good description of the experimentally determined dependence of the power-voltage sensitivity of the detector on the modulation frequency. The lifetime of the quasiparticles is determined, and it is shown that the reabsorption of nonequilibrium phonons by the condensate has a substantial effect even in ultrathin NbN films 5 nm thick, and results in the maximum possible quantum yield. A low concentration of equilibrium quasiparticles and a high quantum yield result in a detectivity D*=1012 W−1·Hz1/2 at a temperature T=4.2 K and D*=1016 W−1·cm· Hz1/2 at T=1.6 K. |
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1063-7850 |
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1593 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
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Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
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Journal Article |
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1999 |
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Semicond. |
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Semicond. |
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33 |
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5 |
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551-554 |
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2DEG, AlGaAs/GaAs heterostructures |
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The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
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1063-7826 |
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1571 |
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Okunev, O.; Chulkova, G.; Milostnaya, I.; Antipov, A.; Smirnov, K.; Morozov, D.; Korneev, A.; Voronov, B.; Gol’tsman, G.; Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Górska, M.; Pearlman, A.; Cross, A.; Kitaygorsky, J.; Sobolewski, R. |
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Registration of infrared single photons by a two-channel receiver based on fiber-coupled superconducting single-photon detectors |
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Conference Article |
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2008 |
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Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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7009 |
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70090V (1 to 8) |
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SSPD, SNSPD, single-photon detectors, superconductors, superconducting nanost |
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Single-photon detectors (SPDs) are the foundation of all quantum communications (QC) protocols. Among different classes of SPDs currently studied, NbN superconducting SPDs (SSPDs) are established as the best devices for ultrafast counting of single photons in the infrared (IR) wavelength range. The SSPDs are nanostructured, 100 μm2 in total area, superconducting meanders, patterned by electron lithography in ultra-thin NbN films. Their operation has been explained within a phenomenological hot-electron photoresponse model. We present the design and performance of a novel, two-channel SPD receiver, based on two fiber-coupled NbN SSPDs. The receivers have been developed for fiber-based QC systems, operational at 1.3 μm and 1.55 μm telecommunication wavelengths. They operate in the temperature range from 4.2 K to 2 K, in which the NbN SSPDs exhibit their best performance. The receiver unit has been designed as a cryostat insert, placed inside a standard liquid-heliumstorage dewar. The input of the receiver consists of a pair of single-mode optical fibers, equipped with the standard FC connectors and kept at room temperature. Coupling between the SSPD and the fiber is achieved using a specially designed, precise micromechanical holder that places the fiber directly on top of the SSPD nanostructure. Our receivers achieve the quantum efficiency of up to 7% for near-IR photons, with the coupling efficiency of about 30%. The response time was measured to be < 1.5 ns and it was limited by our read-out electronics. The jitter of fiber-coupled SSPDs is < 35 ps and their dark-count rate is below 1s-1. The presented performance parameters show that our single-photon receivers are fully applicable for quantum correlation-type QC systems, including practical quantum cryptography. |
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SPIE |
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Sukhoivanov, I.A.; Svich, V.A.; Shmaliy, Y.S. |
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1413 |
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