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Korneev, Alexander; Vachtomin, Yury; Minaeva, Olga; Divochiy, Alexander; Smirnov, Konstantin; Okunev, Oleg; Gol'tsman, Gregory; Zinoni, C.; Chauvin, Nicolas; Balet, Laurent; Marsili, Francesco; Bitauld, David; Alloing, Blandine; Li, Lianhe; Fiore, Andrea; Lunghi, L.; Gerardino, Annamaria; Halder, Matthäus; Jorel, Corentin; Zbinden, Hugo |
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Title |
Single-photon detection system for quantum optics applications |
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Journal Article |
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2007 |
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IEEE J. Select. Topics Quantum Electron. |
Abbreviated Journal |
IEEE J. Select. Topics Quantum Electron. |
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13 |
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4 |
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944-951 |
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SSPD, SNSPD |
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We describe the design and characterization of a fiber-coupled double-channel single-photon detection system based on superconducting single-photon detectors (SSPD), and its application for quantum optics experiments on semiconductor nanostructures. When operated at 2-K temperature, the system shows 10% quantum efficiency at 1.3-¿m wavelength with dark count rate below 10 counts per second and timing resolution <100 ps. The short recovery time and absence of afterpulsing leads to counting frequencies as high as 40 MHz. Moreover, the low dark count rate allows operation in continuous mode (without gating). These characteristics are very attractive-as compared to InGaAs avalanche photodiodes-for quantum optics experiments at telecommunication wavelengths. We demonstrate the use of the system in time-correlated fluorescence spectroscopy of quantum wells and in the measurement of the intensity correlation function of light emitted by semiconductor quantum dots at 1300 nm. |
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1077-260X |
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430 |
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Korneev, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Pernice, W.; An, P.; Golikov, A.; Zubkova, E.; Goltsman, G. |
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Title |
Superconducting Single-Photon Detectors for Integrated Nanophotonics Circuits |
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Conference Article |
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2017 |
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16th ISEC |
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16th ISEC |
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1-3 |
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SSPD, SNSPD |
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We present an overview of our recent achievements in integration of superconducting nanowire single-photon detectors SNSPD with dielectric optical waveguides. We are able to produce complex nanophotonics integrated circuits containing optical elements and photon detector on single chip thus producing a compact integrated platform for quantum optics applications. |
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8314200 |
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1200 |
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Goltsman, G. |
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Superconducting thin film as infrared heterodyne and direct detectors |
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Conference Article |
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2017 |
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16th ISEC |
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16th ISEC |
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1-3 |
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optical waveguide SSPD, SNSPD |
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We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chip-quantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. |
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8314188 |
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1323 |
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Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Room temperature silicon detector for IR range coated with Ag2S quantum dots |
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2019 |
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IRMMW-THz |
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Ag2S quantum dots |
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A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications. |
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2162-2035 |
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978-1-5386-8285-2 |
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8874267 |
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1286 |
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Finkel, M.; Thierschmann, H. R.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. |
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Branchline and directional THz coupler based on PECVD SiNx-technology |
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Conference Article |
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2016 |
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41st IRMMW-THz |
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41st IRMMW-THz |
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microstrip, fixtures, coplanar waveguides, couplers, standards, probes, dielectrics |
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A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope. |
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2162-2035 |
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978-1-4673-8485-8 |
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7758586 |
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1295 |
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