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Korneev, A.; Kouminov, P.; Matvienko, V.; Chulkova, G.; Smirnov, K.; Voronov, B.; Gol'tsman, G. N.; Currie, M.; Lo, W.; Wilsher, K.; Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, Roman |
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Title |
Sensitivity and gigahertz counting performance of NbN superconducting single-photon detectors |
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Journal Article |
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Year |
2004 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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84 |
Issue |
26 |
Pages |
5338-5340 |
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SSPD, NEP, QE |
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We have measured the quantum efficiencysQEd, GHz counting rate, jitter, and noise-equivalentpowersNEPdof nanostructured NbN superconducting single-photon detectorssSSPDsdin thevisible to infrared radiation range. Our 3.5-nm-thick and 100- to 200-nm-wide meander-typedevices(total area 10310mm2), operating at 4.2 K, exhibit an experimental QE of up to 20% inthe visible range and,10% at 1.3 to 1.55mm wavelength and are potentially sensitive up tomidinfrareds,10mmdradiation. The SSPD counting rate was measured to be above 2 GHz withjitter,18 ps, independent of the wavelength. The devices’ NEP varies from,10−17W/Hz1/2for1.55mm photons to,10−20W/Hz1/2for visible radiation. Lowering the SSPD operatingtemperature to 2.3 K significantly enhanced its performance, by increasing the QE to,20% andlowering the NEP level to,3310−22W/Hz1/2, both measured at 1.26mm wavelength. |
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0003-6951 |
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532 |
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Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
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Title |
Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers |
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Journal Article |
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Year |
2004 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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84 |
Issue |
11 |
Pages |
1958-1960 |
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NbN HEB mixers |
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We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K
at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz. |
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352 |
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Siddiqi, I.; Prober, D. E. |
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Nb–Au bilayer hot-electron bolometers for low-noise THz heterodyne detection |
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Journal Article |
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2004 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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84 |
Issue |
8 |
Pages |
1404 |
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Keywords |
HEB, mixers, dynamic range, saturation, LO power, local oscillator power, Nb |
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The sensitivity of present Nb diffusion-cooled hot-electron bolometer (HEB) mixers is not quantum limited, and can be improved by reducing the superconducting transition temperature TC. Lowering TC reduces thermal fluctuations, resulting in a decrease of the mixer noise temperature TM. However, lower TC mixers have reduced dynamic range and saturate more easily due to background noise. We present 30 GHz microwave measurements on a bilayer HEB system, Nb–Au, in which TC can be tuned with Au layer thickness to obtain the maximum sensitivity for a given noise background. These measurements are intended as a guide for the optimization of THz mixers. Using a Nb–Au mixer with TC = 1.6 K, we obtain TM = 50 K with 2 nW of local oscillator (LO) power. Good mixer performance is observed over a wide range of LO power and bias voltage and such a device should not exhibit saturation in a THz receiver. |
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571 |
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Author |
Zwiller, V.; Aichele, T.; Seifert, W.; Persson, J.; Benson, O. |
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Title |
Generating visible single photons on demand with single InP quantum dots |
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Year |
2003 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
82 |
Issue |
10 |
Pages |
1509-1511 |
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Keywords |
single photon, quantum dot, InP |
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0003-6951 |
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503 |
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Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. |
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Title |
Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers |
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2001 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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Volume |
79 |
Issue |
15 |
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2483-2485 |
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0003-6951 |
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311 |
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