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Elezov, M. S.; Scherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. |
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Active and passive phase stabilization for the all-fiber Michelson interferometer |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1124 |
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051014 (1 to 5) |
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Keywords |
Michelson interferometer, phase stabilization |
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We put forward two methods for phase stabilization in the all-fiber Michelson interferometer. To perform passive phase stabilization, we use a heat bath for all fibers and electro-optical components, and put the interferometer in a hermetic case. To perform active phase stabilization, we monitor output power of the interferometer and develop an electronic feedback control. The phase stabilization methods enable stable interference pattern for several minutes, and can be helpful for the development of the optimal quantum receiver for coherent signals. |
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1742-6588 |
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1299 |
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Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
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Towards to the development of THz detectors based on carbon nanostructures |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1092 |
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012039 (1 to 4) |
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Keywords |
CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors |
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Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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1302 |
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Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. |
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Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity |
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Journal Article |
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2014 |
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Laser Phys. Lett. |
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11 |
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1 |
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015004 (1 to 4) |
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HEB applications, HEB detector applications, short THz pulses detection |
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We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. |
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1076 |
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Korneeva, Y. P.; Manova, N. N.; Dryazgov, M. A.; Simonov, N. O.; Zolotov, P. I.; Korneev, A. A. |
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Influence of sheet resistance and strip width on the detection efficiency saturation in micron-wide superconducting strips and large-area meanders |
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Journal Article |
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2021 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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34 |
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8 |
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084001 |
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NbN SSPD, SMSPD |
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We report our study of detection efficiency (DE) saturation in wavelength range 400 – 1550 nm for the NbN Superconducting Microstrip Single-Photon Detectors (SMSPD) featuring the strip width up to 3 μm. We observe an expected decrease of the $DE$ saturation plateau with the increase of photon wavelength and decrease of film sheet resistance. At 1.7 K temperature DE saturation can be clearly observed at 1550 nm wavelength in strip with the width up to 2 μm when sheet resistance of the film is above 630Ω/sq. In such strips the length of the saturation plateau almost does not depend on the strip width. We used these films to make meander-shaped detectors with the light sensitive area from 20×20μm2 to a circle 50 μm in diameter. In the latter case, the detector with the strip width of 0.49 μm demonstrates saturation of DE up to 1064 nm wavelength. Although DE at 1310 and 1550 nm is not saturated, it is as high as 60%. The response time is limited by the kinetic inductance and equals to 20 ns(by 1/e decay), timing jitter is 44 ps. When coupled to multi-mode fibre large-area meanders demonstrate significantly higher dark count rate which we attribute to thermal background photons, thus advanced filtering technique would be required for practical applications. |
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0953-2048 |
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1793 |
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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
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Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
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Journal Article |
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2019 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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32 |
Issue |
7 |
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075003 |
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NbN HEB mixer, GaN buffer layer, sapphire substrate |
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We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
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1277 |
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Smirnov, K.; Divochiy, A.; Vakhtomin, Y.; Morozov, P.; Zolotov, P.; Antipov, A.; Seleznev, V. |
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Title |
NbN single-photon detectors with saturated dependence of quantum efficiency |
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Journal Article |
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Year |
2018 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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31 |
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3 |
Pages |
035011 (1 to 8) |
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NbN SSPD, SNSPD |
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The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm. |
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0953-2048 |
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1232 |
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Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. |
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Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices |
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Journal Article |
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2018 |
Publication |
Nanotechnol. |
Abbreviated Journal |
Nanotechnol. |
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Volume |
29 |
Issue |
24 |
Pages |
245204 (1 to 8) |
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single layer graphene, graphene nanoribbons |
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We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity. |
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Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia |
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0957-4484 |
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PMID:29553479 |
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1308 |
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Zvagelsky, R. D.; Chubich, D. A.; Kolymagin, D. A.; Korostylev, E. V.; Kovalyuk, V. V.; Prokhodtsov, A. I.; Tarasov, A. V.; Goltsman, G. N.; Vitukhnovsky, A. G. |
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Three-dimensional polymer wire bonds on a chip: morphology and functionality |
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Journal Article |
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2020 |
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J. Phys. D: Appl. Phys. |
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J. Phys. D: Appl. Phys. |
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Volume |
53 |
Issue |
35 |
Pages |
355102 |
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photonic wire bonds, PWB |
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Modern microchip-scale transceivers are capable of transmitting data at rates of the order of several terabits per second. In this regard, there is an urgent need to improve the interfaces connecting the chips and extend the bandpass of the interconnections. We use an approach combining silicon nitride nanophotonic circuits with 3D polymer waveguides fabricated by direct laser writing, which can be used as photonic interconnections or photonic wire bonds (PWB). These structures are designed, simulated, fabricated, and optimized for better light transmission at the telecommunication wavelength. An important part of this work is the study of the telecom signal transmission in a 3D polymer waveguide connecting two silicon nitride facing tapers. Two cases are considered: the tapers are one opposite the other or misaligned. Initially, the PWB shape was chosen to be Gaussian and then optimized: the top was circle-shaped and with the lower part still being Gaussian. Transmission losses were measured for both types of waveguides with different shapes. The idea of an optical multi-level crossing for photonic integrated circuits is also suggested as a solution to the problem of interconnections within a single chip. |
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0022-3727 |
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1181 |
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Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. |
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Title |
Superconductivity in highly disordered NbN nanowires |
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Journal Article |
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Year |
2016 |
Publication |
Nanotechnol. |
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Nanotechnol. |
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27 |
Issue |
47 |
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47lt02 (1 to 8) |
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NbN nanowires |
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The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links. |
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National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia |
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0957-4484 |
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PMID:27782000 |
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1332 |
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Sclafani, M.; Marksteiner, M.; Keir, F. M. L.; Divochiy, A.; Korneev, A.; Semenov, A.; Gol'tsman, G.; Arndt, M. |
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Sensitivity of a superconducting nanowire detector for single ions at low energy |
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Journal Article |
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2012 |
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Nanotechnol. |
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Nanotechnol. |
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23 |
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6 |
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065501 (1 to 5) |
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NbN SSPD, SNSPD, superconducting single ion detector, SSID, SNSID |
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We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles. |
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Vienna Center for Quantum Science and Technology, Faculty of Physics, University of Vienna, Vienna, Austria |
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PMID:22248823 |
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1380 |
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