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Author | Samsonova, A. S.; Zolotov, P. I.; Baeva, E. M.; Lomakin, A. I.; Titova, N. A.; Kardakova, A. I.; Goltsman, G. N. | ||||
Title | Signatures of surface magnetic disorder in niobium films | Type | Journal Article | ||
Year | 2021 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 31 | Issue | 5 | Pages | 1-5 |
Keywords | Nb films | ||||
Abstract | We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder ( kFl≈150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm −2 , which is in agreement with the previously reported data for Nb films. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1792 | |||
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Author | Zolotov, P. I.; Semenov, A. V.; Divochiy, A. V.; Goltsman, G. N.; Romanov, N. R.; Klapwijk, T. M. | ||||
Title | Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN | Type | Journal Article | ||
Year | 2021 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 31 | Issue | 5 | Pages | 1-5 |
Keywords | NbN SSPD, SNSPD | ||||
Abstract | We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1222 | |||
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Author | Zolotov, P.; Semenov, A.; Divochiy, A.; Goltsman, G. | ||||
Title | A comparison of VN and NbN thin films towards optimal SNSPD efficiency | Type | Journal Article | ||
Year | 2021 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 31 | Issue | 5 | Pages | 1-4 |
Keywords | NbN SSPD, SNSPD, WSi | ||||
Abstract | Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance. | ||||
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Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 1051-8223 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1223 | |||
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Author | Korneev, A.; Korneeva, Y.; Florya, I.; Semenov, A.; Goltsman, G. | ||||
Title | Photon switching statistics in multistrip superconducting single-photon detectors | Type | Journal Article | ||
Year | 2018 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 28 | Issue | 7 | Pages | 1-4 |
Keywords | SSPD, SNSPD | ||||
Abstract | We study photon count statistics in superconducting single-photon detectors consisting of up to 70 narrow superconducting strips connected in parallel. Using interarrival time analysis, we demonstrate that our samples are operated in the “arm-trigger” regime and require up to seven subsequently absorbed photons to form a resistive state in the whole sample. We also performed numerical simulation of the light and dark count rates versus detector bias current, which are in good agreement with the experimental results. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1304 | |||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 6 |
Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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