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| Author |
Semenov, A. D.; Hübers, Heinz-Wilhelm; Richter, H.; Birk, M.; Krocka, M.; Mair, U.; Vachtomin, Yu. B.; Finkel, M. I.; Antipov, S. V.; Voronov, B. M.; Smirnov, K. V.; Kaurova, N. S.; Drakinski, V. N.; Gol'tsman, G. N. |
| Title |
Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers |
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Journal Article |
| Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
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| Volume |
13 |
Issue |
2 |
Pages |
168-171 |
| Keywords |
NbN HEB mixers |
| Abstract |
We present recent results showing the development of superconducting NbN hot-electron bolometer mixer for German receiver for astronomy at terahertz frequencies and terahertz limb sounder. The mixer is incorporated into a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and backed on a silicon lens. The hybrid antenna had almost frequency independent and symmetric radiation pattern slightly broader than expected for a diffraction limited antenna. At 2.5 THz the best 2200 K double side-band receiver noise temperature was achieved across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. For this operation regime, a receiver conversion efficiency of -17 dB was directly measured and the loss budget was evaluated. The mixer response was linear at load temperatures smaller than 400 K. Implementation of the MgO buffer layer on Si resulted in an increased 5.2 GHz gain bandwidth. The receiver was tested in the laboratory environment by measuring a methanol emission line at 2.5 THz. |
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Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. |
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Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer |
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Journal Article |
| Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
13 |
Issue |
2 |
Pages |
164-167 |
| Keywords |
NbN HEB mixer |
| Abstract |
In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions. |
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341 |
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Reiger, E.; Pan, D.; Slysz, W.; Jukna, A.; Sobolewski, R.; Dorenbos, S.; Zwiller, V.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Minaeva, O.; Gol'tsman, G.; Kitaygorsky, J. |
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Spectroscopy with nanostructured superconducting single photon detectors |
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Journal Article |
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2007 |
Publication |
IEEE J. Select. Topics Quantum Electron. |
Abbreviated Journal |
IEEE J. Select. Topics Quantum Electron. |
| Volume |
13 |
Issue |
4 |
Pages |
934-943 |
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SSPD, SNSPD |
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Superconducting single-photon detectors (SSPDs) are nanostructured devices made from ultrathin superconducting films. They are typically operated at liquid helium temperature and exhibit high detection efficiency, in combination with very low dark counts, fast response time, and extremely low timing jitter, within a broad wavelength range from ultraviolet to mid-infrared (up to 6 mu m). SSPDs are very attractive for applications such as fiber-based telecommunication, where single-photon sensitivity and high photon-counting rates are required. We review the current state-of-the-art in the SSPD research and development, and compare the SSPD performance to the best semiconducting avalanche photodiodes and other superconducting photon detectors. Furthermore, we demonstrate that SSPDs can also be successfully implemented in photon-energy-resolving experiments. Our approach is based on the fact that the size of the hotspot, a nonsuperconducting region generated upon photon absorption, is linearly dependent on the photon energy. We introduce a statistical method, where, by measuring the SSPD system detection efficiency at different bias currents, we are able to resolve the wavelength of the incident photons with a resolution of 50 nm. |
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1077-260X |
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1424 |
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Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
| Title |
Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess |
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Conference Article |
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2004 |
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Proc. 29th IRMMW / 12th THz |
Abbreviated Journal |
Proc. 29th IRMMW / 12th THz |
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329-330 |
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We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area. |
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Karlsruhe, Germany |
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Karlsruhe, Germany |
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RPLAB @ s @ nt_ifb_lopow_qoheb_karlsruhe_2004 |
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354 |
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Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. |
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Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers |
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1997 |
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Proc. 27th Eur. Microwave Conf. |
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2 |
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972-977 |
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HEB mixer, fabrication process |
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The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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Jerusalem, Israel |
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IEEE |
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27th Eur. Microwave Conf. |
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1075 |
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