|
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
1976 |
JETP Lett. |
24 |
125-128 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
1976 |
Sov. Phys. JETP |
43 |
116-122 |
|
|
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
7 |
1248-1250 |
|
|
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
Energy spectrum of free excitons in germanium |
1973 |
JETP Lett. |
18 |
93 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Submillimeter spectroscopy of semiconductors |
1973 |
Sov. Phys. JETP |
37 |
299-304 |
|
|
Goltsman, G. |
Simple method for stabilizing power of submillimetric spectrometer |
1972 |
Pribory i Tekhnika Eksperimenta |
|
136 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
1971 |
JETP Lett. |
14 |
185-186 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N. |
Transitions of electrons between excited states of donors in germanium |
1971 |
JETP Lett. |
14 |
63-65 |
|
|
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
Germanium hot-electron narrow-band detector |
1971 |
Sov. Radio Engineering And Electronic Physics |
16 |
1346 |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
1971 |
JETP Lett. |
14 |
241 |
|