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Author |
Title |
Year |
Publication |
DOI ![sorted by DOI field, descending order (down)](img/sort_desc.gif) |
Links |
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Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
High resolution THz gas spectrometer based on semiconductor and superconductor devices |
2017 |
EPJ Web Conf. |
10.1051/epjconf/201713202001 |
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Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
Tunnel field-effect transistors for sensitive terahertz detection |
2021 |
Nat. Commun. |
10.1038/s41467-020-20721-z |
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Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. |
Resonant terahertz detection using graphene plasmons |
2018 |
Nat. Commun. |
10.1038/s41467-018-07848-w |
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Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
10.1016/j.mee.2018.03.008 |
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Tretyakov, I. V.; Anfertyev, V. A.; Revin, L. S.; Kaurova, N. S.; Voronov, B. M.; Vaks, V. L.; Goltsman, G. N. |
Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator |
2018 |
Radiophys. Quant. Electron. |
10.1007/s11141-018-9863-x |
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