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Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer 2003 J. of communications technol. & electronics 48 671-675 details   url
Gerecht, E.; Musante, C. F.; Jian, H.; Zhuang, Y.; Yngvesson, K. S.; Dickinson, J.; Goyette, T.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. Improved characteristics of NbN HEB mixers integrated with log-periodic antennas 1999 Proc. 10th Int. Symp. Space Terahertz Technol. 200-207 details   url
Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman Characterization of the electron energy relaxation process in NbN hot-electron devices 1999 Proc. 10th Int. Symp. Space Terahertz Technol. 390-397 details   url
Gousev, Yu. P.; Olsson, H. K.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz 1998 Proc. 9th Int. Symp. Space Terahertz Technol. 121-129 details   url
Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. Optical coupling and conversion gain for NbN HEB mixer at THz frequencies 1997 Proc. 4-th Int. Semicond. Device Research Symp. 47-50 details   url
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