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Anosov, A. A.; Nemchenko, O. Yu.; Less, Yu. A.; Kazanskii, A. S.; Mansfel'd, A. D. |
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Title |
Possibilities of acoustic thermometry for controlling targeted drug delivery |
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Journal Article |
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Year |
2015 |
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Acoust. Phys. |
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61 |
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4 |
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488-493 |
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acoustic thermometry, liposome suspension, thermography |
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Model acoustic thermometry experiments were conducted during heating of an aqueous liposome suspension. Heating was done to achieve the liposome phase transition temperature. At the moment of the phase transition, the thermal acoustic signal achieved a maximum and decreased, despite continued heating. During subsequent cooling of the suspension, when lipids again passed through the phase transition point, the thermal acoustic signal again increased, despite a reduction in temperature. This effect is related to an increase in ultrasound absorption by the liposome suspension at the moment of the lipid phase transition. The result shows that acoustic thermography can be used to control targeted delivery of drugs mixed in thermally sensitive liposomes, the integrity of which is violated during heating to the phase transition temperature. |
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1130 |
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Anosov, A. A.; Barabanenkov, Yu. N.; Kazanskii, A. S.; Less, Yu. A.; Sharakshane, A. S. |
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Title |
The inverse problem of acoustothermography with correlation reception of thermal acoustic radiation |
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Journal Article |
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2009 |
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Acoust. Phys. |
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55 |
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1 |
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114-119 |
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Keywords |
acoustic thermography, acoustothermography |
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For the one-dimensional inverse problem of acoustothermography with correlation reception of thermal acoustic radiation, an integral equation is presented and experimentally verified. A method of solving the inverse problem is proposed. The method is based on combining the correlation functions of thermal acoustic radiation that were obtained for different distances between the receivers. |
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1131 |
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Hajenius, M.; Yang, Z. Q.; Gao, J. R.; Baselmans, J. J. A.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G. |
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Optimized sensitivity of NbN hot electron bolometer mixers by annealing |
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Journal Article |
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2007 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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17 |
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2 |
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399-402 |
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NbN HEB mixers |
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We report that the heterodyne sensitivity of superconducting hot-electron bolometers (HEBs) increases by 25-30% after annealing at 85degC in high vacuum. The devices studied are twin-slot antenna coupled mixers with a small area NbN bridge of 1 mum times 0.15 mum, above which there is a SiO 2 passivation layer. The mixer noise temperature, gain, and resistance versus temperature curve of a HEB before and after annealing are compared and analysed. We show that the annealing reduces the intrinsic noise of the mixer by 37% and makes the superconducting transition of the bridge and the contacts sharper. We argue that the reduction ofthe noise is mainly due to the improvement of the transparency of the contact/film interface. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and at a bath temperature of 4.2 K. |
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1051-8223 |
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1426 |
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Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. |
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Resonant terahertz detection using graphene plasmons |
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Journal Article |
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2018 |
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Nat. Commun. |
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Nat. Commun. |
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9 |
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5392 (1 to 8) |
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THz, graphene plasmons |
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Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications. |
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Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru |
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2041-1723 |
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1148 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Room temperature silicon detector for IR range coated with Ag2S quantum dots |
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Journal Article |
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2019 |
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Phys. Status Solidi RRL |
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Phys. Status Solidi RRL |
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13 |
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9 |
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1900187-(1-6) |
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For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. |
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1862-6254 |
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1149 |
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