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Heeres, R.W.; Dorenbos, S.N.; Koene, B.; Solomon, G.S.; Kouwenhoven, L.P.; Zwiller, V. |
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Title |
On-Chip Single Plasmon Detection |
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Journal Article |
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Year |
2010 |
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Nano Letters |
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Nano Lett. |
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10 |
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661-664 |
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Keywords |
optical antennas; SSPD; Single surface plasmons; superconducting detectors; semiconductor quantum dots; nanophotonics |
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Abstract |
Surface plasmon polaritons (plasmons) have the potential to interface electronic and optical devices. They could prove extremely useful for integrated quantum information processing. Here we demonstrate on-chip electrical detection of single plasmons propagating along gold waveguides. The plasmons are excited using the single-photon emission of an optically emitting quantum dot. After propagating for several micrometers, the plasmons are coupled to a superconducting detector in the near-field. Correlation measurements prove that single plasmons are being detected. |
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RPLAB @ akorneev @ |
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620 |
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Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
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Title |
Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer |
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Journal Article |
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Year |
1996 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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68 |
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16 |
Pages |
2285-2287 |
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HEB mixer, diffusion cooling channel, diffusion channel |
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0003-6951 |
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262 |
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van de Stadt, H. |
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An improved 1 THz waveguide mixer |
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Conference Article |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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536 |
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Charlottesville, Virginia, USA |
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Probably other authors exist. |
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263 |
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Belitsky, V. Yu.; Kollberg, E. L. |
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Tuning circuit for NbN SIS mixer |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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234 |
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264 |
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Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
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Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
Type |
Conference Article |
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Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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290-302 |
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NbN HEB mixers, fabrication process |
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We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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266 |
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