| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
2019 |
Phys. Status Solidi RRL |
13 |
1900187-(1-6) |
| Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. |
Planar Schottky diode with a Γ-shaped anode suspended bridge |
2020 |
J. Phys.: Conf. Ser. |
1695 |
012154 |
| Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. |
Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector |
2020 |
J. Phys.: Conf. Ser. |
1695 |
012156 |
| Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
2019 |
Proc. IWQO |
|
369-371 |
| Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
195 |
26-31 |
| Tretyakov, I.; Maslennikov, S.; Semenov, A.; Safir, O.; Finkel, M.; Ryabchun, S.; Kaurova, N.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
Impact of operating conditions on noise and gain bandwidth of NbN HEB mixers |
2015 |
Proc. 26th Int. Symp. Space Terahertz Technol. |
|
39 |
| Shurakov, A.; Seliverstov, S.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G. |
Input bandwidth of hot electron bolometer with spiral antenna |
2012 |
IEEE Trans. THz Sci. Technol. |
2 |
400-405 |
| Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform |
2019 |
EPJ Web Conf. |
220 |
03012 |
| Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
Gap frequency and photon absorption in a hot electron bolometer |
2016 |
Proc. 27th Int. Symp. Space Terahertz Technol. |
|
121 |
| Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
Electron energy relaxation in disordered superconducting NbN films |
2020 |
Phys. Rev. B |
102 |
054501 (1 to 15) |
