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Author |
Nagatsuma, T.; Hirata, A.; Royter, Y.; Shinagawa, M.; Furuta, T.; Ishibashi, T.; Ito, H. |
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Title |
A 120-GHz integrated photonic transmitter |
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Conference Article |
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Year |
2000 |
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Proc. International topical meeting on microwave photonics (MWP 2000) |
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225 - 228 |
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THz, teraherts communications, terahertz communication channel, photodiode, transmitter |
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A photonics-based 120-GHz transmitter has been developed. A photodiode, a planar antenna and a silicon lens were integrated to form a compact millimeter-wave (MMW) emitter. The MMW signal emitted from the transmitter has been detected with a waveguide-mounted Schottky diode. The received power exceeded 100 μW, which is the highest value ever reported for photonic MMW transmitter at frequencies of >100 GHz |
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595 |
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Author |
Ito, Hiroshi |
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Title |
High frequency photodiode work in Japan |
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Manuscript |
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2002 |
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Report at NTT photonics laboratories |
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1-4 |
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THz, terahertz communications, photodiode |
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The recent progress in the device performance of the uni-traveling-carrier photodiode (UTC-PD) is described. The UTC-PD utilizes only electrons as the active carriers, and this unique feature is the key to achieving excellent high-speed and high-output characteristics simultaneously. The achieved performance includes a record 3-dB bandwidth of 310 GHz, high-power photonic millimeter-wave generation with an output power of over +13 dBm at 100 GHz, high-output-voltage photoreceiver operation at bit rates of up to 80 Gbit/s, and demultiplexing operation at 200 Gbit/s using a monolithic PD-EAM optical gate. |
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596 |
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Author |
Финкель, М. И. |
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Title |
Терагерцовые смесители на эффекте электронного разогрева в ультратонких плёнках NbN и NbTiN |
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2006 |
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М. МПГУ |
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HEB, detector, mixer, terahertz, THz, infrared, IR, direct detection effect, conversion bandwidth, conversion loss |
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Ph.D. thesis |
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597 |
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Author |
Рябчун, С. А. |
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Широкополосные высокостабильные терагерцовые смесители на горячих электронах из тонких сверхпроводниковых пленок NbN |
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2009 |
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М. МПГУ |
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98 |
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HEB, mixer, terahertz, THz, stability, Allan variance, conversion bandwidth, in-situ technique, Au contacts |
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Ph.D. thesis |
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598 |
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Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. |
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Title |
Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
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Journal Article |
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2010 |
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Физика и техника полупроводников |
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44 |
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11 |
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1475-1478 |
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2DEG, AlGaAs/GaAs heterostructures mixers |
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Методом субмиллиметровой спектроскопии с высоким временным разрешением измерены температурная и концентрационная зависимости полосы преобразования смесителей терагерцового диапазона AlGaAs/GaAs на разогреве двумерных электронов с фононным каналом их охлаждения. Полоса преобразования на уровне 3 дБ (f3 dB) при 4.2 K при изменении концентрации ns варьируется в пределах 150-250 МГц в соответствии со степенным законом f3 dB propto ns-0.5, что соответствует доминирующему механизму рассеяния на пьезоэлектрических фононах. Минимальное значение коэффициента потерь преобразования полупроводникового смесителя достигается в структурах с высокой подвижностью носителей mu>3·105 см2/В·с при 4.2 K. |
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Duplicated as 1216 |
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RPLAB @ gujma @ |
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702 |
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