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Author | Kitaygorsky, J.; Zhang, J.; Verevkin, A.; Sergeev, A.; Korneev, A.; Matvienko, V.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Sobolewski, R. | ||||
Title | Origin of dark counts in nanostructured NbN single-photon detectors | Type | Journal Article | ||
Year | 2005 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 15 | Issue | 2 | Pages | 545-548 |
Keywords | SSPD dark counts, SNSPD, dark counts rate | ||||
Abstract | We present our study of dark counts in ultrathin (3.5 to 10 nm thick), narrow (120 to 170 nm wide) NbN superconducting stripes of different lengths. In experiments, where the stripe was completely isolated from the outside world and kept at temperature below the critical temperature Tc, we detected subnanosecond electrical pulses associated with the spontaneous appearance of the temporal resistive state. The resistive state manifested itself as generation of phase-slip centers (PSCs) in our two-dimensional superconducting stripes. Our analysis shows that not far from Tc, PSCs have a thermally activated nature. At lowest temperatures, far below Tc, they are created by quantum fluctuations. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1057 | |||
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Author | Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. | ||||
Title | Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity | Type | Journal Article | ||
Year | 2014 | Publication | Laser Phys. Lett. | Abbreviated Journal | |
Volume | 11 | Issue | 1 | Pages | 015004 (1 to 4) |
Keywords | HEB applications, HEB detector applications, short THz pulses detection | ||||
Abstract | We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1076 | |||
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Author | Smirnov, A. V.; Baryshev, A. M.; de Bernardis, P.; Vdovin, V. F.; Gol'tsman, G. N.; Kardashev, N. S.; Kuz'min, L. S.; Koshelets, V. P.; Vystavkin, A. N.; Lobanov, Yu. V.; Ryabchun, S. A.; Finkel, M. I.; Khokhlov, D. R. | ||||
Title | The current stage of development of the receiving complex of the millimetron space observatory | Type | Journal Article | ||
Year | 2012 | Publication | Radiophys. Quant. Electron. | Abbreviated Journal | Radiophys. Quant. Electron. |
Volume | 54 | Issue | 8 | Pages | 557-568 |
Keywords | Millimetron space observatory, HEB applications | ||||
Abstract | We present an overview of the state of the onboard receiving complex of the Millimetron space observatory in the development phase of its preliminary design. The basic parameters of the onboard equipment planned to create and required for astrophysical observations are considered. A review of coherent and incoherent detectors, which are central to each receiver of the observatory, is given. Their characteristics and limiting parameters feasible at the present level of technology are reported. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1079 | |||
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Author | Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R. | ||||
Title | Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers | Type | Journal Article | ||
Year | 2017 | Publication | Beilstein J. Nanotechnol. | Abbreviated Journal | Beilstein J. Nanotechnol. |
Volume | 8 | Issue | Pages | 38-44 | |
Keywords | carbon nanotubes; CNT; infrared; integrated optics devices; nanomaterials | ||||
Abstract | Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources. | ||||
Address | Department of Materials and Earth Sciences, Technische Universitat Darmstadt, Darmstadt 64287, Germany | ||||
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ISSN | 2190-4286 | ISBN | Medium | ||
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Notes | PMID:28144563; PMCID:PMC5238692 | Approved | no | ||
Call Number | RPLAB @ kovalyuk @ | Serial | 1109 | ||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 6 |
Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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